FMV20N60S1 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor FMV20N60S1
- FEATURES
- Lowon-resistance: RDS(on)≤0.19Ω (max)
- Lowswitching loss
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- UPS(Uninterruptible Power Supply)
- Powerconditioner system
- Powersupply
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous 20 A IDM DrainCurrent-SinglePulsed 60 A PD TotalDissipation@TC=25℃ 53 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 2.36 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 58 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor FMV20N60S1 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 600 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.25mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=10A 0.19 Ω IGSS Gate-SourceLeakageCurrent VGS= ±30V;VDS=0V ±100 nA IDSS Drain-SourceLeakage Current VDS=600V;VGS=0V 25 μA VSD Diodeforwardvoltage IDR =20A,VGS =0V 1.35 V