FMT06N30 FCI | Alldatasheet
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Technical content
30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A = 28mW W W W RDS(ON), Vgs@4.5V, Ids@5A = 33mW W W W RDS(ON), Vgs@2.5V, Ids@5A = 52mW W W W #$% Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limit Unit VDS 30 VGS ±12 ID 6 IDM 30 TA = 25oC 2.0 TA = 75oC 1.3 TJ, Tstg -55 to 150 oC Junction-to-Ambient Thermal Resistance (PCB mounted) RqJA 62.5 oC/W Note: 1. Maximum DC current limited by the package 2. 1-in 2oz Cu PCB board November '05 Rev 2 1 Operating Junction and Storage Temperature Range Continuous Drain Current Gate-Source Voltage Maximum Power Dissipation N-Channel MOSFET Parameter V A W Drain-Source Voltage PD Pulsed Drain Current Top View Internal Schematic DiagramSOT-23 Gate Drain Source FMT06N30 6.0A 30V N-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 30 - - V Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 5A 43 52 Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 5A 27 33 Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 5.8A 24 28 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 0.6 0.8 V Zero Gate Voltage Drain Current IDSS VDS = 25V, VGS = 0V 1 uA Gate Body Leakage IGSS VGS = +20V, VDS = 0V + 100 nA Gate Resistance Rg 0.6 W Forward Transconductance gfs VDS = 15V, ID = 15A 7 13 S Dynamic Total Gate Charge Qg 5 Gate-Source Charge Qgs 0.9 Gate-Drain Charge Qgd 1.4 Turn-On Delay Time td(on) 8.1 Turn-On Rise Time tr 9.95 Turn-Off Delay Time td(off) 21.85 Turn-Off Fall Time tf 5.35 Input Capacitance Ciss 562 Output Capacitance Coss 106 Reverse Transfer Capacitance Crss 75 Source-Drain Diode Max. Diode Forward Current IS 1.7 A Diode Forward Voltage VSD IS = 1A, VGS = 0V 1.2 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% November '05 Rev 2 2 N-Channel Enhancement-Mode MOSFET VDS = 15V, VGS = 0V f = 1.0 MHz pF mW nC VDD = 15V, RL = 2.2W ID = 1A, VGEN = 10V RG = 3W ns VDS = 10V, ID = 6A VGS = 6.9V FMT06N30 6.0A 30V N-Channel Enhancement-Mode MOSFET