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Technical content

2~3 List http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 N-Channel Power MOSFET FMSBSS123 Document ID Issued Date Revised Date Revision Page. DS-231146 2009/08/10 2011/07/21 C 7

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 PARAMETER Drain-source voltage Drain current-Continuous *1 Total Device Dissipation FR-5 Board *3 TA=25°C Derate above 25°C Gate- source voltage-Continuous Non-repetitive (tp≤50us) Operation junction temperature Symbol VDSS PD TJ RθJA MIN. -55 TYP. MAX. 100 +150 556 UNIT Vdc o C o C/W o Maximum ratings (AT T =25 C unless otherwise noted)A VGS VGSM ID 225 1.8 ±20 ±40 170 Vdc Vpk mAdc mW mW/°C Typical Thermal resistance junction to ambient -pulsed*2 IDM 680 Storage temperature TSTG -55 +150 o C 100V N-Channel Enhancement Mode Power MOSFET Mechanical data

  • Case :
  • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026
  • Mounting Position : Any
  • Weight : Approximated 0.008 gram Epoxy:UL94-V0 rated flame retardant Molded plastic, SOT-23 FMSBSS123

Features

ow on-resistance R = 6.0ΩDS(ON) ow input capacitance : 20pF Fast switching speed : 20ns ow output capacitance : 9pF ow threshole : 2.8V In compliance with EU RoHS 2002/95/EC directives

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  • Suffix "-H" indicates Halogen-free part, ex.FMSBSS123-H Document ID Issued Date Revised Date Revision Page. SOT-23 Dimensions in inches and (millimeters) 0.035 (0.89) 0.051 (1.30) 0.063 (1.60) 0.047 (1.20) 0.108 (2.75) 0.083 (2.10) 0.027 (0.67) 0.013 (0.32) (A) (B) (C) 0.120 (3.04) 0.110 (2.80) .084(2.10) 0.034 (0.85) 0.020 (0.50) 0.003 (0.09) DS-231146 2009/08/10 2011/07/21 C 7 *1: The Power Dissipation of the package may result in a lower continuous drain current. *2: Pulse Width 300us, Duty Cycle 2.0% ≤ ≤ N-Channel Power MOSFET

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MS PARAMETER Gate-body leakage current Gate threshold voltage Static drain-source on-resistance Forward transconductance Intput capacitance Reverse transfer capacitance Turn-On Delay Time Turn-Off Delay Time VGS = 0V, ID= 250uAdc VGS = 20Vdc, VDS=0 VDS = , ID = 1.0mAdcVGS VGS = 10Vdc, ID = 100mAdc CONDITIONS Symbol BVDSS IGSS VGS(th) IDSS gfs Ciss td(on) MIN. 100 TYP. MAX. UNIT Vdc nAdc Vdc Ω mmhos V pF ns o Electrical characteristics (At T =25 C unless otherwise noted)A Drain-source breakdown voltage VCC = 30Vdc RGS=50Ω IC=0.28Adc, VGS=10Vdc VDS =25Vdc, ID =100mAdc Zero gate voltage drain current VGS = 0V, VDS = 100Vdc O , TJ = 25 CO VGS = 0V, VDS = 100Vdc, TJ = 125 C 60 15 µAdc RDS(ON) 0.8 Off Characteristics On Characteristics *4 2.8 Diode forward on-voltage O VGS =0Vdc, J =25 C,ID = 0.34Adc, T 1.3 Dynamic Characteristics Output capacitance Coss Crss VDS = 25Vdc, VGS = 0V, f=1.0MHz 9.0 4.0 td(off) 40 VSD 6.0 *4: Pulse Test: Pulse Width ≤300us, Duty Cycle ≤2.0% FMSBSS123 5.0 Document ID Issued Date Revised Date Revision Page. DS-231146 2009/08/10 2011/07/21 C 7 Switching Characteristics *4 Reverse Diode N-Channel Power MOSFET

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 FIG.1 OHMIC REGION FIG.2 TRANSFER CHARACTERISTICS FIG.3 TEMPERATURE VS DRAIN-SOURCE ON-RESISTANCE FIG.4 TEMPERATURE VS GATE THRESHOLE VOLTAGE Rating and characteristic curves (FMSBSS123) Document ID Issued Date Revised Date Revision Page. V , DRAIN TO SOURCE VOLTAGE, (V)DS I , DRAIN CURRENT,(A)D 0 4.0 8.0 10 2.0 1.2 0.4 0.8 O T = 25 CA V =10VGS1.6 2.0 6.0 I , DRAIN CURRENT(A)D V , GATE TO SOURCE VOLTAGE(V)GS 0 2.0 4.0 10 1.0 0.8 0.6 0.2 0.4 8.0 V = 10VDS O -55 C O 125 C O 25 C O T, TEMPERATURE ( C) R , STATIC DRAIN-SOURCE ON-RESISTANCEDS(on) (NORMZLIZED)-60 -20 +20 2.4 2.0 1.2 1.6 0.4 I =200mAD V =10VGS +140+100 0.8 +60 O T, TEMPERATURE ( C) -60 -20 +20 1.2 1.1 0.9 1.0 0.7 I =1.0mAD V = VDS GS +140+100 0.8 +60 V , THRESHOLD VOLTAGE(NORMZLIZED)GS(th) DS-231146 2009/08/10 2011/07/21 C 7 6.0

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Suggested solder pad layout SOT-23 Dimensions in inches and (millimeters) 0.035(0.90) 0.031(0.80) 0.079(2.0) 0.037(0.95) 0.037(0.95) Marking Type number Marking code FMSBSS123 SA Pinning information PinD Drain PinG Gate PinS Source Pin Simplified outline Symbol G D S Drain Source Gate FMSBSS123 Document ID Issued Date Revised Date Revision Page. DS-231146 2009/08/10 2011/07/21 C 7 N-Channel Power MOSFET

E B d F W PA D D1D2 C T http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Item Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 7" Reel outside diameter 13" Reel inner diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Reel width Overall tape thickness Tape width E B C d F T W P A D D Symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 unit:mm 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 3.15 2.77 1.22 FMSBSS123 Document ID Issued Date Revised Date Revision Page. DS-231146 2009/08/10 2011/07/21 C 7 N-Channel Power MOSFET

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 FMSBSS123 Document ID Issued Date Revised Date Revision Page. Reel packing SOT-23 3000 4.0 30,000 183*183*123 178 383*262*387 240,000 11.6 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) Profile Feature Soldering Condition Average ramp-up rate(TL to TP) <3 /sec Preheat o -Temperature Min(Tsmin) 150 C o -Temperature Max(Tsmax) 200 C -Time(min to max)(ts) 60~120sec Tsmax to TL o -Ramp-upRate <3 C/sec Time maintained above: o -Temperature(TL) 217 C -Time(tL) 60~260sec o o Peak Temperature(TP) 255 C-0/+5 C o Time within 5 C of actual Peak Temperature(tP) o Ramp-down Rate <6 C/sec o Time 25 C to Peak Temperature <6minutes o C 10~30sec 3.Reflow soldering 1.Storage environment: Temperature=5 ~40 Humidity=55%±25% 2.Reflow soldering of surface-mount devices o o C C Suggested thermal profiles for soldering processes Critical Zone TL to TP TL Tsmax Tsmin Ramp-up Tp tS Preheat o t25 C to Peak Time TL TP Ramp-down Temperature DS-231146 2009/08/10 2011/07/21 C 7 N-Channel Power MOSFET