FMS7G10US60S FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • Short Circuit Rated 10 µs @ TC = 100°C, VGE = 15V
  • High Speed Switching
  • Low Saturation Voltage : V CE(sat) = 2.1 V @ IC = 10A
  • High Input Impedance
  • Built-in Brake & 1 Phase Rectifier Circuit
  • Fast & Soft Anti-Parallel FWD
  • Built-in NTC Thermistor

Applications

  • AC & DC Motor Controls
  • General Purpose Inverters
  • Robotics
  • Servo Controls

Description

Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control and general inverters where short-circuit ruggedness is required. Package Code : 25PM-AA Internal Circuit Diagram 4 5 NTC 11 12 3 6

2 www.fairchildsemi.com FMS7G10US60S Rev. B1 FMS7G10US60S Compact & Complex Module Absolute Maximum Ratings TC = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Package Marking and Ordering Information (2) TMC2 Relibility test was done under -45°C ~ 125°C Symbol Description FMS7G10US60S Units Inverter Brake VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ T C = 80°C1 0 A ICM (1) Pulsed Collector Current 20 A IF Diode Continuous Forward Current @ T C = 80°C1 0 A IFM Diode Maximum Forward Current 20 A PD Maximum Power Dissipation @ T C = 25°C6 6 W TSC Short Circuit Withstand Time @ T C = 100°C1 0 µs Converter V RRM Repetitive Peak Reverse Voltage 1600 V IO Average Output Rectified Current 20 A IFSM Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 200 A I2t Energy pulse @ 1Cycle at 60Hz 164 A 2s Common T J Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C VISO Isolation Voltage @ AC 1minute 2500 V Mounting Torque Mounting part Screw @ M4 2.0 N·m Device Marking Device Package Reel Size Tape Width Quantity FMS7G10US60S FMS7G10US60S 25PM-AA -- -- --

3 www.fairchildsemi.com FMS7G10US60S Rev. B1 FMS7G10US60S Compact & Complex Module Electrical Characteristics of IGBT @ Inverter TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage V GE = 0V, IC = 250µA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current V CE = VCES, VGE = 0V -- -- 250 µA IGES Gate - Emitter Leakage Current V GE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) Gate - Emitter Threshold Voltage I C = 10mA, VCE = VGE 5.0 6.5 8.5 V VCE(sat) Collector to Emitter Saturation Voltage I C = 10A, VGE = 15V -- 2.1 2.7 V Dynamic Characteristics Cies Input Capacitance V CE = 30V, VGE = 0V, f = 1MHz -- 710 -- pF Coes Output Capacitance -- 57 -- pF Cres Reverse Transfer Capacitance -- 12 -- pF Switching Characteristics td(on) Turn-On Delay Time V CC = 300 V, IC = 10A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 25°C -- 65 130 ns tr Rise Time -- 65 130 ns td(off) Turn-Off Delay Time -- 80 160 ns tf Fall Time -- 100 200 ns Eon Turn-On Switching Loss -- 0.15 -- mJ Eoff Turn-Off Switching Loss -- 0.2 -- mJ td(on) Turn-On Delay Time V CC = 300 V, IC = 10A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 125°C -- 70 140 ns tr Rise Time -- 60 120 ns td(off) Turn-Off Delay Time -- 90 180 ns tf Fall Time -- 200 350 ns Eon Turn-On Switching Loss -- 0.16 -- mJ Eoff Turn-Off Switching Loss -- 0.3 -- mJ Tsc Short Circuit Withstand Time V CC = 300 V, VGE = 15V @ TC = 100°C 10 -- -- µs Qg Total Gate Charge V CE = 300 V, IC = 10A, VGE = 15V -- 35 50 nC Qge Gate-Emitter Charge -- 8 15 nC Qgc Gate-Collector Charge -- 12 20 nC

4 www.fairchildsemi.com FMS7G10US60S Rev. B1 FMS7G10US60S Compact & Complex Module Electrical Characteristics of DIODE @ Inverter TC = 25°C unless otherwise noted Electrical Characteristics of DIODE @ Converter TC = 25°C unless otherwise noted Thermal Characteristics NTC Thermistor Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage I F = 10A T C = 25°C- - 1 . 92 . 8 V trr Diode Reverse Recovery Time I F = 10A di / dt = 20 A/µs TC = 25°C -- 85 150 ns Irr Diode Peak Reverse Recovery Current T C = 25°C- - 0 . 71 . 4 A Qrr Diode Reverse Recovery Charge T C = 25°C -- 30 105 nC Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage I F = 20A T C = 25°C- - 1 . 1 1 . 5 V IRRM Repetitive Reverse Current V R = VRRM TC = 25°C- - - - 8 m A Symbol Parameter Typ. Max. Units Inverter R θJC Junction-to-Case (IGBT Part, per 1/6 Module) -- 1.9 °C/W RθJC Junction-to-Case (DIODE Part, per 1/6 Module) -- 2.9 °C/W Brake R θJC Junction-to-Case (IGBT Part) -- 1.9 °C/W RθJC Junction-to-Case (DIODE Part) -- 2.9 °C/W Converter R θJC Junction-to-Case (DIODE Part, per 1/6 Module) -- 1.5 °C/W Weight Weight of Module 60 -- g Symbol Parameter Tol. Typ. Units Thermistor R25 Rated Resistance @ Tc = 25 °C +/- 5 % 4.7 K Ω B(25/100) B - Value +/- 3 % 3530

Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage Figure 3. Saturation Voltage vs. Case Figure 4. Transient Thermal Impedance Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

15 V20 V

9 www.fairchildsemi.com FMS7G10US60S Rev. B1 FMS7G10US60S Compact & Complex Module Mechanical Dimensions 28.0-29.017 28.0-32.016 28.0-49.515 20.0-49.514 11.5-49.513 0.0-49.512 0.0-46.511 0.0-38.010 0.0-35.09 28.0-11.021 28.0-14.020 28.0-20.019 28.0-23.018 0.0-32.08 yx 3.5 3.5 3.5 3.5 -29.0 -25.0 -18.0 -13.0 -6.0 -3.0 0.0 CoordinatePin #No 5.525 11.524 20.023 28.022 0.07 0.06 0.05 0.04 0.03 0.02 0.01 -. Pin Coordinate * datum pin : #1 * Pin Tilt : ±0.15 57.0 ±0.20 71.0 -0.10 +0.20 82.2 ±0.20 37.9 ±0.20 30.8 -0.10 +0.20 23.0±0.15 14.0±0.15 2-Ø4.3 -0.00 +0.20 Ø1.0±0.05 11.2 -0.10 +0.20 16.3 -0.10 +0.20 21.0 ±0.20 3.2 -0.10 +0.20 16.7 -0.10 +0.20 5.1 -0.10 +0.20 15 22 17.5 ±0.20 4-Ø6.0 4.3±0.204.3±0.20 Name Plate Mounting-Hole 25PM-AA Dimensions in Millimeters

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Wire™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ Rev. I16 10 www.fairchildsemi.com FMS7G10US60S Rev. B1 FMS7G10US60S Compact & Complex Module