FMS55N30 FCI | Alldatasheet
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Technical content
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOMMaximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limi t Unit VDS 30 VGS + 20 ID 55 IDM 350 TA = 25oC7 0 TA = 75oC4 2 TJ, Tstg -55 to 150 oC EAS 300 mJ RθJC 1.8 Junction-to-Ambient Thermal Resistance (PCB mounted) R θJA 40 Note: 1. Maximum DC current limited by the package 2. 1-in 2oz Cu PCB board Jun '05 Rev 1 1 Avalanche Energy with Single Pulse ID=50A, VDD=25V, L=0.5mH Operating Junction and Storage Temperature Range Continuous Drain Current Gate-Source Voltage Maximum Power Dissipation N-Channel MOSFET oC/W Junction-to-Case Thermal Resistance Parameter V A W Drain-Source Voltage PD Pulsed Drain Current Top View Internal Schematic DiagramSOP-08 Gate Drain Source FMS55N30 30V N-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter Symbol Test Conditio n Min Typ Ma x Unit Static Drain-Source Breakdown Voltage BV DSS VGS = 0V, ID = 250uA 30 - - V Drain-Source On-State Resistance R DS(on) VGS = 4.5V, ID = 15A 8.0 9.6 Drain-Source On-State Resistance R DS(on) VGS = 10V, ID = 15A 6.0 7.2 Gate Threshold Voltage V GS(th) VDS =VGS, ID = 250uA 1 1.8 3 V Zero Gate Voltage Drain Current I DSS VDS = 25V, VGS = 0V 1 uA Gate Body Leakage I GSS VGS = +20V, VDS = 0V + 100 nA Gate Resistance Rg Ω Forward Transconductance g fs VDS = 15V, ID = 15A S Dynamic Total Gate Charge Qg 26 Gate-Source Charge Q gs 6 Gate-Drain Charge Q gd 5 Turn-On Delay Time t d(on) 17 Turn-On Rise Time t r 3.5 Turn-Off Delay Time t d(off) 40 Turn-Off Fall Time t f 6 Input Capacitance C iss 2134 Output Capacitance C oss 343 Reverse Transfer Capacitance C rss 134 Source-Drain Diode Max. Diode Forward Current I S 20 A Diode Forward Voltage V SD IS = 20A, VGS = 0V 0.85 1.3 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% Jun '05 Rev 1 2 VDS = 15V, VGS = 0V f = 1.0 MHz pF mΩ nC VDD = 15V, RL = 15Ω ΙD = 1Α, VGEN = 10V RG = 6Ω ns VDS = 15V, ID = 25A VGS = 10V FMS55N30 30V N-Channel Enhancement-Mode MOSFET