FMS4414 FCI | Alldatasheet
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Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and CurrentMaximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limi t Unit VDS 30 VGS + 20 ID 8.5 IDM 40 TA = 25oC3 TA = 75oC 2.1 TJ, Tstg -55 to 150 oC RθJC 59 Junction-to-Ambient Thermal Resistance (PCB mounted) R θJA 16 Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Operating Junction and Storage Temperature Range Continuous Drain Current Gate-Source Voltage Maximum Power Dissipation N-Channel MOSFET oC/W Junction-to-Case Thermal Resistance Parameter V A W Drain-Source Voltage PD Pulsed Drain Current Top View Internal Schematic DiagramSOP-08 Gate Drain Source 30V 8.5A N Channel Enhancement-Mode MOSFET FMS4414
FMS4414 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditio n Min Typ Ma x Unit Static Drain-Source Breakdown Voltage BV DSS VGS = 0V, ID = 250uA 30 - - V Drain-Source On-State Resistance R DS(on) VGS = 4.5V, ID = 5A 30.0 40.0 Drain-Source On-State Resistance R DS(on) VGS = 10V, ID = 8.5A 20.0 26.0 Gate Threshold Voltage V GS(th) VDS =VGS, ID = 250uA 1 1.4 3 V Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V 1 uA Gate Body Leakage I GSS VGS = +20V, VDS = 0V + 100 nA Gate Resistance Rg Ω Forward Transconductance g fs VDS = 5V, ID = 5A S Dynamic Total Gate Charge Qg 4.52 Gate-Source Charge Q gs 1.24 Gate-Drain Charge Q gd 1.68 Turn-On Delay Time t d(on) 7.43 Turn-On Rise Time t r 3.41 Turn-Off Delay Time t d(off) 20.4 Turn-Off Fall Time t f 3.01 Input Capacitance C iss 400.96 Output Capacitance C oss 100.47 Reverse Transfer Capacitance C rss 71.82 Source-Drain Diode Max. Diode Forward Current I S 4.3 A Diode Forward Voltage V SD IS = 1A, VGS = 0V 0.76 1 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% Oct '05 Rev 3 2 VDS = 15V, VGS = 0V f = 1.0 MHz pF mΩ nC VDD = 15V, RL = 2.2Ω ΙD = 1Α, VGEN = 10V RG = 6Ω ns VDS = 15V, ID = 6A VGS = 10V 30V 8.5A N Channel Enhancement-Mode MOSFET