FMS3 KEXIN | Alldatasheet
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www.kexin.com.cn 1 Tran sistors PNP Transistors FMS3 (KMS3) ■ Features
- Collector Current Capability IC=-50mA
- Collector Emitter Voltage VCEO=-120V
- High breakdown voltage. 1 2 3 5 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -120 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -100 V , IE=0 -0.5 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.5 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-10 mA, IB=-1mA -1.2 DC current gain hFE VCE= -6V, IC= -2mA 180 820 Transition frequency fT VCE= -12V, IE= 2mA,f=100MHz 140 MHz V uA V ■ Marjking Marking S3 +0.2 -0.1 1 2 3 Unit: mm 1.6 +0.2 -0.12.8 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.1 -0.1 SOT-23-5( ) +0.01 -0.01 +0.2 -0.1 0.4-0.1 +0.1 SOT-153