DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

2~ 3 4~ 5 List http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 SMD MOSFET FMS2301 Document ID Issued Date Revised Date Revision Page. DS-231129 2009/02/10 2011/07/21 C 8

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 SMD MOSFET

Features

In compliance with EU RoHS 2002/95/EC directives. Suffix "-H" indicates Halogen-free part, ex.FMS2301-H. R 110mΩ@V =-4.5V R 150mΩ@V =-2.5V DS(ON) GS DS(ON) GS Super high density cell design for extremely low R DS(ON) PARAMETER Drain-source voltage Drain current-continue Maximum power dissipation Gate- source voltage-continue Operation junction temperature CONDITIONS Symbol VDSS PD TJ RθJA -55 to +150 Limit -20 100 UNIT V o C o C/W Maximum ratings (AT T =25 C unless otherwise noted)A o VGS ID 1.3 ±8.0 -2.7 V A W Thermal resistance-junction to ambient* -pulsed IDM -11 Storage temperature TSTG -65 to +150 o C 20V P-Channel Enhancement Mode MOSFET Mechanical data Epoxy:UL94-V0 rated flame retardant Case : Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Mounting Position : Any Molded plastic, SOT-23 Weight : Approximated 0.008 gram -2 1. T= 2 5 CA O T= 7 0 CA O Document ID Issued Date Revised Date Revision Page. T= 2 5 CA O T= 7 0 CA O 0.8 * The device mounted on 1in FR4 board with 2 oz copper FMS2301 SOT-23 Dimensions in inches and (millimeters) 0.035 (0.89) 0.051 (1.30) 0.063 (1.60) 0.047 (1.20) 0.108 (2.75) 0.083 (2.10) 0.027 (0.67) 0.013 (0.32) (A) (B) (C) DS-231129 2009/02/10 2011/07/21 C 8

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MS PARAMETER Gate-body leakage current-forward Gate threshold voltage Static drain-source on-resistance a Intput capacitance Reverse transfer capacitance Turn-On Delay Time Turn-Off Delay Time V = 0V, I = -250uAGS D V = 8V, V =0GS DS V = , I = -250uADS D VGS V = -4.5V, I = -2.8AGS D CONDITIONS Symbol BVDSS IGSSF VGS(th) IDSS Ciss Td(on) MIN. -20 TYP. MAX. 100 UNIT V nA V mΩ V pF ns Electrical characteristics (At T =25 C unless otherwise noted)A o Drain-source breakdown voltage V = -6.0V, R =6 V= - 4 . 5 V DS GEN GS ΩR= 6 . 0 ,L Ω SMD MOSFET Zero gate voltage drain current V = -20V, V = 0VDS GS , T = 25 CJ O -1.0 μA Gate-body leakage current-reverse V= - 8 V ,GS DS V= 0 IGSSR -100 nA V = -2.5V, I = -2.0AGS D RDS(ON) 510 -0.4 STATIC 110 150 Diode Forward Voltage V =0V, =25 CGS J O I = -1.0A, TS -1.4 DYNAMIC Output capacitance Coss Crss V = -15V, V = 0V, f=1.0MHz DS GS 53 Total gate charge Gate-source charge Gate-drain charge Qg Qgs Qgd 5.8 V= - 4 . 5 V DS D GS Tr Td(off) Tf Notes a Pulse test pulse width 300us duty cycle 2 Guaranteed by design not subject to production testing:. : , % , , . ≦≦ VSD Document ID Issued Date Revised Date Revision Page. -1.0 110 -0.7 1.2 FMS2301 DS-231129 2009/02/10 2011/07/21 C 8

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Rating and characteristic curves (FMS2301) Document ID Issued Date Revised Date Revision Page. DS-231129 2009/02/10 2011/07/21 C 8

Rating and characteristic curves (FMS2301) Page 5 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. DS-231129 2009/02/10 2011/07/21 C 8

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 SMD MOSFET Suggested solder pad layout SOT-23 Dimensions in inches and (millimeters) 0.035(0.90) 0.031(0.80) 0.079(2.0) 0.037(0.95) 0.037(0.95) Marking Type number Marking code FMS2301 Pinning information PinD Drain PinG Gate PinS Source Pin Simplified outline Symbol G D S Drain Source Gate Document ID Issued Date Revised Date Revision Page. Note: 1. PN WAG” is FMS2301-H WA” shown on the 1st~2rd position on --- FMS2301 G” shown on the 3th position on --- Green product-Halogen free DC 0A is the sequence of “0-9” & “A~Z” 0~9 shown on the 4th position on ---2010~2019 A~Z shown on the5th position on ---1week~26week ~ shown on the 5th position on ---27week~52week AZ 2301, 01 FMS2301 WAG0A (Note 1) DS-231129 2009/02/10 2011/07/21 C 8

E B d F W PA D D1D2 C T http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 SMD MOSFET Item Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 7" Reel outside diameter 13" Reel inner diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Reel width Overall tape thickness Tape width P E B C d F T W P A D D D Symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 unit:mm 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 3.15 2.77 1.22 Document ID Issued Date Revised Date Revision Page. FMS2301 DS-231129 2009/02/10 2011/07/21 C 8

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 SMD MOSFET Document ID Issued Date Revised Date Revision Page. Reel packing SOT-23 3000 4.0 30,000 183*183*123 178 383*262*387 240,000 11.6 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) Profile Feature Soldering Condition Average ramp-up rate(T to T ) <3 /sec Preheat -Temperature Min(Tsmin) 150 -Temperature Max(Tsmax) 200 -Time(min to max)(t ) 60~120sec Tsmax to T -Ramp-upRate <3 /sec Time maintained above: -Temperature(T ) 217 -Time(t ) 60~260sec Peak Temperature(T ) 255 0/ 5 Time within 5 of actual Peak Temperature(t ) Ramp-down Rate <6 /sec Time 25 to Peak Temperature <6minutes LP s L L L P P o o o o o oo o o o C C C C C C- + C C C C 10~30sec 3.Reflow soldering 1.Storage environment: Temperature=5 ~40 Humidity=55%±25% 2.Reflow soldering of surface-mount devices oo CC Suggested thermal profiles for soldering processes Critical Zone TL to TP Critical Zone TL to TP TL Tsmax Tsmin Ramp-up Tp tS Preheat t25 C to Peak o Time TL TP Ramp-down Temperature FMS2301 DS-231129 2009/02/10 2011/07/21 C 8