FMS05P30 FCI | Alldatasheet
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Technical content
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOMMaximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limi t Unit VDS -30 VGS + 20 ID -5.3 IDM -20 TA = 25oC 2.5 TA = 75oC TJ, Tstg -55 to 150 oC EAS mJ RθJC 30 Junction-to-Ambient Thermal Resistance (PCB mounted) R θJA 50 Note: 1. Maximum DC current limited by the package 2. 1-in 2oz Cu PCB board August '05 Rev 2 1 Avalanche Energy with Single Pulse ID=50A, VDD=25V, L=0.5mH Operating Junction and Storage Temperature Range Continuous Drain Current Gate-Source Voltage Maximum Power Dissipation P-Channel MOSFET oC/W Junction-to-Case Thermal Resistance Parameter V A W Drain-Source Voltage PD Pulsed Drain Current Top View Internal Schematic DiagramSOP-08 Gate Drain Source FMS05P30 30V P-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter Symbol Test Conditio n Min Typ Ma x Unit Static Drain-Source Breakdown Voltage BV DSS VGS = 0V, ID = -250uA -30 - - V Drain-Source On-State Resistance R DS(on) VGS = -4.5V, ID = -4.2A 82.0 90.0 Drain-Source On-State Resistance R DS(on) VGS = -10V, ID = -5.3A 50.0 60.0 Gate Threshold Voltage V GS(th) VDS =VGS, ID = -250uA -1.0 -3.0 V Zero Gate Voltage Drain Current I DSS VDS = -24V, VGS = 0V -1 uA Gate Body Leakage I GSS VGS = +20V, VDS = 0V + 100 nA Gate Resistance Rg Ω Forward Transconductance g fs VDS = -15V, ID = -5.3A 4 7 S Dynamic Total Gate Charge Qg 9.52 Gate-Source Charge Q gs 3.43 Gate-Drain Charge Q gd 1.71 Turn-On Delay Time t d(on) 10.8 Turn-On Rise Time t r 2.33 Turn-Off Delay Time t d(off) 22.53 Turn-Off Fall Time t f 3.87 Input Capacitance C iss 551.57 Output Capacitance C oss 90.96 Reverse Transfer Capacitance C rss 60.79 Source-Drain Diode Max. Diode Forward Current I S -1.9 A Diode Forward Voltage V SD IS = -5.3A, VGS = 0V -1.3 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% August '05 Rev 2 2 VDS = -15V, VGS = 0V f = 1.0 MHz pF mΩ nC VDD = -15V, RL = 15Ω ΙD = −1Α, VGEN = -10V RG = 6Ω ns VDS = -15V, ID = -5.3A VGS = -10V FMS05P30 30V P-Channel Enhancement-Mode MOSFET