FMP3009 GWSEMI | Alldatasheet

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tings (Ta=25℃ unless ot herwise noted) Para meter Symbol Value Unit Drain-S ource Voltage VDS -30 V Gate-Source V oltage VGS ±12 V Conti nuous Drain Current ID -9 A Po wer Dissipation PD 750 mW T hermal Resistance from Junction to Ambient RθJA 165 ℃/W ℃ Operation Junction and Storage Temperature Range TJ,Tstg -55~ +150 V(BR )DSS RDS(on)TYP ID -30V 20mΩ@-4.5V -9A 27mΩ@-2.5V DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DFNWB2×2-6L-J Equivalent Circuit Plastic-Encapsulate MOSFETS FMP3009 P-Channel Enhancement Mode Field Effect Transistor General Description The MP3009 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. F

Parameter Symbol Test Condition Min Typ Max Units Static characteristics Drain-source breakdown voltage BV DSS V GS = 0V, I D =-250µA -30 V Zero gate voltage drain current I DSS V DS =-30V,V GS = 0V -1 µA Gate-source leakage current I GSS V GS =±12V, V DS = 0V ±100 nA V GS =-4.5V, I D =-9A 20 28 mΩ Drain-source on-resistance (note 1) R DS(on) V GS =-2.5V, I D =-6A 27 40 mΩ Forward tranconductance (note 1) g FS V DS =-5V, I D =-9A 24 S Gate threshold voltage V GS(th) V DS GS , I D Diode forward voltage (note 1) V SD I S =-2A,V GS =0V -1.2 V Dynamic characteristics (note 2) Input capacitance C iss 780 pF Output capacitance C oss 150 pF Reverse transfer capacitance C rss V DS =-15V,V GS =0V,f =1MHz 98 pF Switching Characteristics (note 2) Turn-on delay time t d(on) 11 ns Turn-on rise time t r 8 ns Turn-off delay time t d(off) 28.5 ns Turn-off fall time t f V GS =-4.5V,V DS =-6V, ID=-9A,R GEN =6Ω 10.5 ns Notes: 1. Pulse test: Pul se width ≤300µs, duty cycle ≤2%. 2. These parameters have no way to verify. MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified Total gate charge Qg 13.8 nC TGate-source charge Qgs 2.5 nC TGate-drain charge Qgd V GS =-4.5V,V DS =-6V, ID=-9A 3.3 nC FMP3009 P-Channel Enhancement Mode Field Effect Transistor

-0.1 -0 -1 -2 -3 -4 -5 -10 -12 -14 -0 -2 -4 -6 -8 -10 -10 -12 -14 25 50 75 100 125 -0.0 -0.3 -0.6 -0.9 -1.2 -1.5 Pulsed Pulsed TJ=100℃ V SD I S — — TJ=25℃ SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) V GS =-1.8V V GS =-2V,-3V,-4V,-5V Output Characteristics V GS =-1.5V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) V GS =-2.5V TJ=25℃ Pulsed V GS =-4.5V TJ=25℃ Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (A) I D ——R DS(ON) TJ=100℃ TJ=25℃ ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) V GS ——R DS(ON) I D =-9A V DS =-3V Pulsed DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics TJ=100℃ TJ=25℃ I D =-250uA Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T j ( ) FMP3009 P-Channel Enhancement Mode Field Effect Transistor Typical Characteristics

Min. Max. Min. Max. A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 D 1.900 2.100 0.075 0.083 E 1.900 2.100 0.075 0.083 D1 0.800 1.000 0.031 0.039 E1 0.850 1.050 0.033 0.041 D2 0.200 0.400 0.008 0.016 E2 0.460 0.660 0.018 0.026 b 0.250 0.350 0.010 0.014 e k L 0.174 0.326 0.007 0.013 0.650BSC. 0.026BSC. 0.350REF. 0.014REF. Symbols Dimensions in Milimeters Dimensions in Inches 0.203REF. 0.008REF. 0.275REF. 0.011REF. FMP3009 P-Channel Enhancement Mode Field Effect Transistor Plastic surface mounted package; 6 leads DFNWB2x2-6 PACKAGE OUTLINE L-J