FMP20N60S1 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor FMP20N60S1
- FEATURES
- WithTO-220 packaging
- Lowswitching loss
- Lowon-stateresistance
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operationz
- APPLICATIONS
- Switching applications
- DC-DCconverters
- Uninterruptiblepower supply
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous@Tc=25℃ Tc=100℃ 12.6 A IDM DrainCurrent-SinglePulsed 60 A PD TotalDissipation 150 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.83 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor FMP20N60S1 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 600 V VGS(th) GateThresholdVoltage VDS=±30V;ID=0.25mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=10A 161 190 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±30V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V;Tc=25℃ VDS=480V;VGS=0V;Tc=125℃ 250 μA VSDF Diodeforwardvoltage ISD=20A,VGS =0V 1.35 V