FMP20N05 FAIRCHILD | Alldatasheet
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° 3469674 FAIRCHILD SEMICONDUCTOR 84 pe J ayese74 0027830 ? I . . —— FMP20N05/FMP18NO05 7- 37- patetlimda lI) N-Channel Power MOSFETs, _ A Schlumberger Company 18-20 A, 50 V ; Power And Discrete Division j—_—. re Ad Discrete Division Description T0-220AB These devices are very low Rosiony. 50 V, n-channel, en- hancement mode, power MOSFETs especially designed to | serve the low voltage, high speed, switching markets. Typi- 4 xO : cal applications are SMPS for telecommunication and in- Ne a strumentation, DC motor controls, emitter switching, LE \\ ‘synchronous rectification, and systems that are operated jp from low voltage batteries, such as automotive and porta- — ble equipment, ote. FMP18NO5 © Extremely low Rosjon) FMP20NOS © Vos Rated at +30 V ! © Silicon Gate for Fast Switching Speeds ‘ © Rugged . : © Low Drive Requirements ; B © Ease of Paralleling } i Maximum Ratings Rating Rating Symbol Characteristic FMP20NO5 FMP18NO5 Unit E Vper Drain to Gate Voltage" v Ros = 20 k2 Ts, Tat | Operating Junction and 55 to +160 85 to +150 *c Storage Temperatures Th Maximum Lead Temperature °C for Soldering Purposes, 1/8" From Case for §'$ Maximum On-State Characteristics Rosion) | Static Drain-to-Source 0.086 2 On Resistance 1b Drain Current A Continuous at To = 25°C 20 Continuous at To = 100°C 14 Pulsed 60 Maximum Thermal Characteristics Rac | Thermal Resistance, 1.67 1.67 “cw Junction to Case - Raa | Thermal Resistance, “c/w Junction to Ambient . Pp Total Power Dissipation 75 75 w at Te = 25°C Notes For information concerning connection dlagram and package outinereter to Section 2. Se 2-43 po RED t Bak Se , eed
: . 3469674 FAIRCHILD SEMICONDUCTOR 44 pe Bayesezy gooe7631 49 I | . 7 FMP20N05, 1239-1 FMP18N05, “i i Electrical Characteristics (To = 25°C unless otherwise noted) i Off Characteristics toss Zero Gate Voltage Drain Curent | ‘| 250 ‘| uA __| Vps=Rated Voss, Vas=0 V Vas =0 V, To = 125°C On Characteristics { Fips(en) | Static Drain-Source On-Resistance® | | | Ves=10 V, Ip=10 A Vpsien) | Drain-Source On-Voltage | | iw | | i FMP20NO5, v Vas = 10 V; Ip = 20 A; TS ‘ FMP18NO5 To = 100°C Dynamic Characteristics Gas [Reverso Tnstr Capastanco | |e | oF _| Switching Characteristics (Tc = 25°C, Figures 9, 10) a Vpp = 40 V Symbol | __Characterisio ——[tye | max | unit | Test Conditions Source-Drain Diode Characteristics Notes . 1 ty = 425° to +160° 2. Pulse tost: Pulso width <80 ys, Duty cycle <1% LY 2-44
: bo ren au DE fsueae74 ooezaaa 2 : 3469674 FAIRCHILD SEMICONDUCTOR 84D 27833 Ds { fe FMP20NO5 | FMP18NO5 1-39-11 Typical Performance Curves (Cont) Figure 7 Forward Biased Safe Operating Area Figure 6 Transient Thermal Resistance vs Time
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