FMP2011 GWSEMI | Alldatasheet

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Technical content

Plastic-Encapsulate MOSFETS

DESCRIPTION

FEATURES

 Advanced trench MOSFET process technology  Ultra low on-resistance with low gate charge

APPLICATIONS

 PWM application  Load switch  Battery charge in cellular handset Maximum ratings (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage 20V DSS Gate-Source Voltage V GS ±12 V Drain Current-Continuous I D -11 Drain Current-Pulsed (note 1) I DM -44 A Power Dissipation (note 4 ) 4 P D W Thermal Resistance from Junction to Ambient(note 4 ) R θJA Operation Junction and Storage Temperature Range TJ,TSTG -55 ~+150 ℃ 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN Equivalent Circuit FMP2011 P-Channel Power MOSFET The FMP2011 uses advanced trench technology to provide excellent R low gate charge and operation with low gate voltage. This device is suitable for use as a load switching application and a wide variety of other applications. DS(on) , V (BR)DSS RDS(on)TYP I D -20 V 15mΩ@-4.5V -11A 22mΩ@-2.5V DFNWB2×2-6L-J

Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =-250µA -20 V Gate-Body Leakage Current IGSS V DS =0V, VGS =±12V ±100 nA Zero Gate Voltage Drain Current IDSS V DS =-20V, VGS =0V -1 µA On Characteristics (note 2) Gate-Threshold Voltage VGS(th) V DS =VGS, ID =-250µA -0.45 -0.85 -1.2 V Drain-Source On-State Resistance RDS(on) VGS =-2.5V, ID =-6.4A 22 40 mΩ Forward Transconductance gFS VDS =-10V, ID =-7.2A 16 S Dynamic Characteristics (note 3) Input Capacitance Ciss 2700 Output Capacitance Coss 680 Reverse Transfer Capacitance Crss VDS =-10V,VGS =0V,f =1MHz 590 pF Total Gate Charge Qg 35 48 Gate-Source Charge Qgs 5 Gate-Drain Charge Qgd VDS =-6V,VGS =-4.5V,ID =-10A nC Drain-Source Diode Characteristics Diode Forward Current IS -11 A Diode Forward Voltage(note 2) VSD V GS =0V, ISD=-1.9A -1.2 V Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature. 2.Pulse Test: Pulse With ≤300μs,Duty Cycle≤2%. 3.Guaranteed by design, not subject to production testing. 4.The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, double sides, in a still air environment with TA=25℃. 026)(7(/(&75,&$/&+$5$&7(5,67,&6 aT =25 Я unless otherwise specified SWITCHING CHARACTERISTICS (note 3) Turn-on delay time td(on) VGEN=-4.5V,VDD=-10V, ID=-1A,Rg=10Ω 11 ns Turn-on rise time tr 35 ns Turn-off delay time td(off) 30 ns Turn-off fall time tf 10 ns FMP2011 P-Channel Power MOSFET

-0.1 -10 -0 -1 -2 -3 -4 -5 -12 -16 -20 -0 -2 -4 -6 -8 -10 -0 -1 -2 -3 -4 -12 -16 -20 25 50 75 100 125 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 TJ=100℃ Pulsed TJ=125℃ VSDIS —— TJ=25℃ SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) VGS=-1.8V VGS=-2V VGS=-3V,-4V,-5V VGS=-1.5V Output Characteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) TJ=25℃ Pulsed VGS=-2.5V VGS=-4.5V TJ=25℃ Pulsed ON-RESISTANCE RDS(ON) (m) DRAIN CURRENT ID (A) ID——RDS(ON) TJ=125℃ Pulsed TJ=100℃ TJ=25℃ ON-RESISTANCE RDS(ON) (m) GATE TO SOURCE VOLTAGE V GS (V) VGS——RDS(ON) ID=-6A VDS=-3V Pulsed DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Transfer Characteristics TJ=100℃,125℃ TJ=25℃ ID=-250uA Threshold Voltage THRESHOLD VOLTAGE VTH (V) JUNCTION TEMPERATURE Tj ( )℃ Typical Characteristics FMP2011 P-Channel Power MOSFET

1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 1E-4 1E-3 0.01 0.1 Maximum Forward Biased Safe Operating Area In descending order NORMALIZED THERMAL IMPEDENCE, Zthja SQUARE WAVE PULSE DURATION, tp (sec) Normalized Traisient Thermal Impendance 0.1 100 0.1 100 10s 100ms 10ms 1ms D=TON/T RθJA=31℃/W TJ,PK=TA+PDM×Zthja×RθJA 100us DC BVdss IDM RDSon Limited RθJA=31℃/W TA=25℃ Single pulse DRAIN CURRENT -ID (A) 1 10 DRAIN TO SOURCE VOLTAGE -VDS (V) Typical Characteristics FMP2011 P-Channel Power MOSFET

Min. Max. Min. Max. A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 D 1.900 2.100 0.075 0.083 E 1.900 2.100 0.075 0.083 D1 0.800 1.000 0.031 0.039 E1 0.850 1.050 0.033 0.041 D2 0.200 0.400 0.008 0.016 E2 0.460 0.660 0.018 0.026 b 0.250 0.350 0.010 0.014 e k L 0.174 0.326 0.007 0.013 0.650BSC. 0.026BSC. 0.350REF. 0.014REF. Symbols Dimensions in Milimeters Dimensions in Inches 0.203REF. 0.008REF. 0.275REF. 0.011REF. FMP2011 P-Channel Power MOSFET Plastic surface mounted package; 6 leads PACKAGE OUTLINE DFNWB2x2-6 L-J