FMMT4400 KEXIN | Alldatasheet
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General purpose transistors. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 40 V Emitter-base voltage V EBO 6V Collector current I C 600 mA Power dissipation P tot 330 mW Operating and storage temperature range T j,Tstg - 5 5t o+ 1 5 0 Marking Marking 1KZ Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO IC=0.1mA 60 V Collector-emitter breakdown voltage V (BR)CEO IC=1mA 40 V Emitter-base breakdown voltage V (BR)EBO IE=0.1mA 6V Collector-emitter cut-off current I CEX VCE=35V VEB(off) =0.4V 0.1 ìA Base cut-off current I BEX VCE=35V VEB(off) =3V 0.1 ìA DC current gain * h FE IC=150mA, VCE=1V 50 150 Collector-emitter saturation voltage * V CE(sat) IC=150mA,IB=15mA IC=500mA,IB=50mA 0.4 0.75 V Base-emitter saturation voltage * V BE(sat) IC=150mA,IB=15mA IC=500mA,IB=50mA 0.75 0.95 1.2 V Current-gain-bandwidth product f T IC=20mA, VCE=10V f=100KHz 200 MHz Output capacitance C obo VCB=5V, IE=0, f=100KHz 6.5 pF Input capacitance C ibo VBE=0.5V, IC=0, f=100KHz 30 pF Delay time t on VCC=30V, IC=150mA,IB1=15mA VBE(off)=2V 35 ns Storage time t off VCC=30V, IC=150mA IB1=I B2=15mA 255 ns * Pulse test: tp 300 ìs; d 0.02.