FMMT417 KEXIN | Alldatasheet
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High speed pulse generators SOT23 NPN Silicon Planar Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 320 V Collector-emitter voltage V CEO 100 V Emitter-base voltage V EBO 6V Peak collector current I CM 60 A Collector current I C 500 mA Power dissipation P tot 330 mW Operating and storage temperature range T j,Tstg - 5 5t o+ 1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO IC=1mA 320 V Collector-emitter breakdown voltage * V (BR)CEO IC=100ìA 100 V Emitter-base breakdown voltage V (BR)EBO IE=10ìA 6V VCB=80V 0.1 ìA VCB=80V, Tamb=100 10 ìA Emitter cut-off current I EBO VEB=4V 0.1 ìA Collector-emitter saturation voltage * V CE(sat) IC=10mA,IB=1mA 0.5 V Base-emitter saturation voltage * V BE(sat) IC=10mA,IB=1mA 0.9 V VC=200V, CCE=620pF 15 A VC=250V, CCE=620pF 25 A Static Forward Current Transfer Ratio h FE IC=10mA,VCE=10V * 25 Transition frequency f T IC=10mA,VCE=20V,f=20MHz 40 MHz Collector-base capacitance C cb VCB=20V, IE=0, f=1MHz 8p F * Pulse test: tp = 300 ìs; d0.02. Collector cutoff current I CBO ISBCurrent in second breakdown Marking Marking 417