FMMT415, FMMT417
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Features
Avalanche Transistor 60A Peak Avalanche Current (Pulse width = 20ns) BVCES > 260V (415) & 320V (417) BVCEO > 100V Specifically designed for Avalanche mode operation Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description
The FMMT41 5/417 are NPN silicon planar bipolar transistor s designed for operating in avalanche mode. Tight process control and low inductance packaging combine to produce high -current pulses with fast edges. Mechanical Data Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate)
Applications
Laser Diode Drivers for Ranging and Measurement (LIDAR) Radar Systems Fast Edge Switch Generator High Speed Pulse Generators Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FMMT415TD AEC-Q101 415 7 8 500 FMMT417TD AEC-Q101 417 7 8 500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, “Green” and Lead-free. 3. Halogen- and Antimony-free “Green” products are defined as those which contain <900 ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information xxx = Product Type Marking Code (See Ordering Information) Top View Pin-Out Top View Device Symbol C E B C E B SOT23 589 xxx
Datasheet Number: DS33084 Rev. 6 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated FMMT415 FMMT417 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol FMMT415 FMMT417 Unit Collector-Base Voltage VCBO 260 320 V Collector-Emitter Voltage VCES 260 320 V Collector-Emitter Voltage VCEO 100 100 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 500 mA Peak Collector Current (Pulse Width = 20ns) ICM 60 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 500 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 250 °C/W Thermal Resistance, Junction to Lead (Note 6) RθJL 197 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point (at the end of the collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Datasheet Number: DS33084 Rev. 6 - 2 3 of 7 www.diodes.com November 2015 © Diodes Incorporated FMMT415 FMMT417 Thermal Characteristics and Derating Information 0 20 40 60 80 100 120 140 1600.0 0.1 0.2 0.3 0.4 0.5 0.6 15 x 15mm FR4 1oz Copper Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k0 120 160 200 240 15 x 15mm FR4 1oz Copper Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k0.1 100 15 x 15mm FR4 1oz Copper Pulse Power Dissipation Pulse Width (s) Max Power Dissipation (W)
Datasheet Number: DS33084 Rev. 6 - 2 4 of 7 www.diodes.com November 2015 © Diodes Incorporated FMMT415 FMMT417 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Emitter Breakdown Voltage FMMT415 BVCES 260 — — V IC = 1mA TJ = -55 to +150°C FMMT417 320 — — IC = 1mA Collector-Emitter Breakdown Voltage (Note 8) BVCEO 100 — — V IC = 100µA Emitter-Base Breakdown Voltage BVEBO 6 — — V IE = 100µA Collector Cutoff Current ICBO — — 100 nA µA VCB = 180V VCB = 180V, TJ = +100°C Emitter Cutoff Current IEBO — — 100 nA VEB = 4V Static Forward Current Transfer Ratio (Note 8) hFE 25 — — — IC = 10mA, VCE = 10V Collector-Emitter Saturation Voltage (Note 8) VCE(sat) — — 500 mV IC = 10mA, IB = 1mA Base-Emitter Saturation Voltage (Note 8) VBE(sat) — — 900 mV IC = 10mA, IB = 1mA Pulsed Current in Second Breakdown IUSB — A A VC = 200V, CCE = 620pF VC = 250V, CCE = 620pF Collector-Emitter Inductance Lce — 2.5 — nH Standard SOT23 leads Output Capacitance Cobo — — 8 pF VCB = 20V, IE = 0 f = 100MHz Transition Frequency fT 40 — — MHz VCE = 20V, IC = 10mA, f = 20MHz Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Datasheet Number: DS33084 Rev. 6 - 2 5 of 7 www.diodes.com November 2015 © Diodes Incorporated FMMT415 FMMT417 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Datasheet Number: DS33084 Rev. 6 - 2 6 of 7 www.diodes.com November 2015 © Diodes Incorporated FMMT415 FMMT417 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and c learance distances between device terminals and PCB tracking. J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a X Y Y1 C SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9
Datasheet Number: DS33084 Rev. 6 - 2 7 of 7 www.diodes.com November 2015 © Diodes Incorporated FMMT415 FMMT417 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com