FMMT4126 KEXIN | Alldatasheet
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Switching transistors. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -25 V Collector-emitter voltage V CEO -25 V Emitter-base voltage V EBO -4 V Collector current I C -200 mA Power dissipation P tot 330 mW Operating and storage temperature range T j,Tstg - 5 5t o+ 1 5 0
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO IC=-10µ A, -25 V Collector-emitter breakdown voltage V (BR)CEO IC=-1mA, -25 V Emitter-base breakdown voltage V (BR)EBO IE=-10µ A, -4 V Collector cutoff current I CBO VCE=-20V -50 nA Emitter cut-off current I EBO VEB=-3V -50 nA Collector-emitter saturation voltage * V CE(sat) IC=-50mA, IB=-5mA -0.4 V Base-emitter saturation voltage * V BE(sat) IC=-50mA, IB=-5mA -0.95 V DC current gain * h FE IC=-2mA, VCE=-1V 120 360 Current-gain-bandwidth product f T IC=-10mA, VCE=-20V f=100MHz 250 MHz Output capacitance C obo VCB=-5V, IE=0, f=140KHz 4.5 pF Input capacitance C ibo VBE=-0.5V, IC=0, f=140KHz 10 pF Noise figure NF VCE=-5V IC=-200µ A,Rg=-2K? f=30Hz to 15KHz at -3dB points 4d B Small signal current transfer h fe IC=-2mA, VCE=-1V, f=1KHz 120 180 Delay time t d 25 ns Rise time t r 18 ns Storage time t s 140 ns Fall time t f 15 ns * Pulse test: tp 300 ìs; d 0.02. VCC=-3V, IC=-10mA,IB1=-1mA VBE(off)=-0.5V VCC=-3V, IC=-10mA IB1=I B2=-1mA FMMT4126 Marking Marking ZE