FMMT4124 KEXIN | Alldatasheet
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Switching transistors. Switching Transistors FMMT4124 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 30 V Collector-emitter voltage V CEO 25 V Emitter-base voltage V EBO 5V Collector current I C 200 mA Power dissipation P tot 330 mW Operating and storage temperature range T j,Tstg - 5 5t o+ 1 5 0
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO IC=10µ A 30 V Collector-emitter breakdown voltage V (BR)CEO IC=1mA 25 V Emitter-base breakdown voltage V (BR)EBO IE=10µ A 5V Collector cutoff current I CBO VCE=20V 50 nA Emitter cut-off current I EBO VEB=3V 50 nA Collector-emitter saturation voltage * V CE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage * V BE(sat) IC=50mA, IB=5mA 0.95 V DC current gain * h FE IC=2mA, VCE=1V 120 360 Current-gain-bandwidth product f T IC=10mA, VCE=20V f=100MHz 300 MHz Output capacitance C obo VCB=5V, IE=0, f=140KHz 4p F Input capacitance C ibo VBE=0.5V, IC=0, f=140KHz 8p F Noise figure NF VCE=5V IC=200µ A,Rg=2K? f=30Hz to 15KHz at -3dB points 6d B Small signal current transfer h fe IC=2mA, VCE=1V, f=1KHz 120 480 Delay time t d 24 ns Rise time t r 13 ns Storage time t s 125 ns Fall time t f 11 ns * Pulse test: tp 300 ìs; d 0.02. VCC=3V, IC=10mA,IB1=1mA VBE(off)=0.5V VCC=3V, IC=10mA IB1=I B2=1mA FMMT4124 Marking Marking ZC