FMMT411

FMMT411

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 8

Technical content

Features

• IUSB = 35A Typical
• BVCES > 80V
• BVCEO > 15V
• Specifically Designed for Low-Voltage Avalanche Mode Operation
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
• An automotive-compliant part is available under a separate datasheet (FMMT411Q). Mechanical Data
• Package: SOT23
• Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin-Plated Leads. Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (Approximate)

Description

The FMMT411 is a silicon planar bipolar transistor designed for operating in avalanche mode. Tight process control and low inductance packaging combine to produce high-current pulses with fast edges.

Applications

• Laser diode drivers for ranging and measurement (LIDAR)
• Fast edge switch generators
• High-speed pulse generators Ordering Information (Note 4) Orderable Part Number Package Marking Reel Size (inches) Tape Width (mm) Packing Qty. Carrier FMMT411TD SOT23 (Type DN) 411 7 8 500 Reel FMMT411TA SOT23 (Type DN) 411 7 8 3000 Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. C E B C E B Top View Pin-Out Top View Device Symbol SOT23 (Type DN) THE FMMT411 IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE CONTACT US.

Document number: DS42948 Rev. 3 - 3 2 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. FMMT411 Marking Information Date Code Key Year 2020 - 2026 2027 2028 2029 2030 2031 2032 2033 2034 2035 Code H - N P R S T U V W X Y Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Absolute Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCES 80 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 7 V Continuous Collector Current IC 900 mA Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 800 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 156 °C/W Thermal Resistance, Junction to Leads (Note 6) RθJL 30 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 15mm  15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady state. 6. Thermal resistance from junction to top of case. 7. Refer to JEDEC specifications JESD22-A114 and JESD22-A115. 411 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: N = 2026) M or M = Month (ex: 9 = September)

Document number: DS42948 Rev. 3 - 3 3 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. FMMT411 Thermal Characteristics and Derating Information

Document number: DS42948 Rev. 3 - 3 4 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. FMMT411 Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 80 — — V IC = 100µ A Collector-Emitter Breakdown Voltage BVCES 80 75 — — V IC = 100µ A TJ = -50°C to +150°C Collector-Emitter Breakdown Voltage BVCEO 15 — — V IC = 100µ A Emitter-Base Breakdown Voltage BVEBO 7 — — V IE = 100µ A Collector Cutoff Current ICBO — — 100 nA µA VCB = 75V VCB = 75V, TJ = +100° C Emitter Cutoff Current IEBO — — 20 nA VEB = 6V Static Forward Current Transfer Ratio (Note 8) hFE 100 — — — IC = 10mA, VCE = 10V Collector-Emitter Saturation Voltage (Note 8) VCE(sat) — — 100 mV IC = 10mA, IB = 1mA Base-Emitter Saturation Voltage (Note 8) VBE(sat) — — 800 mV IC = 10mA, IB = 1mA Current in Second Breakdown (Pulsed) (Note 9) IUSB — 35 — A VCE = 70V, CCE = 470pF Collector-Emitter Inductance Lce — 2 — nH Standard SOT23 (Type DN) leads Output Capacitance Ccbo — 15 — pF VCB = 20V, f = 100MHz Transition Frequency fT 40 — — MHz VCE = 20V, IC = 10mA, f = 20MHz Switching Times td — 118 — ns IC = 100mA, VCC = 10V IB1 = -IB2 = 10mA tr — 79 — ns ts — 388 — ns tf — 48 — ns Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 9. Dependent on circuit layout parasitics and base drive di/dt. Not production tested.

Document number: DS42948 Rev. 3 - 3 5 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. FMMT411 Typical Characteristics (@TA = +25° C, unless otherwise specified.) TA=25°C

Document number: DS42948 Rev. 3 - 3 6 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. FMMT411 Typical Characteristics (@TA = +25° C, unless otherwise specified.) (continued) Application Considerations In a typical circuit a large pulse is applied to the base and the resultant energy is enough to cause the onset of avalanche multiplication. Once breakdown has been established it will continue until the energy in the breakdown region is insufficient to maintain the condition, or the crystal lattice is permanently damaged. It is important therefore to limit the total energy expended during breakdown. The typical method of achieving avalanche uses the circuit shown below, wherein the energy per cycle is set by the charge voltage and capacitance value. The effect of parasitic inductance in the circuit must be considered. Excessive inductance will reduce the current pulse height and slew current pulse edges. Loop area enclosed by the power circuit and track lengths should be minimized. Thermal limitations must also be observed to ensure the transistor junction temperature is not exceeded. Avalanche power diss ipation can be calculated from the energy per pulse and the pulse frequency, but PCB thermal resistance depends on many factors suc h as design, layout, and proximity of other components; so thermal performance should be verified by measurement. IC=100µA BVCES V BVCES vs Temperature FMMT411

Document number: DS42948 Rev. 3 - 3 7 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. FMMT411 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 (Type DN) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 (Type DN) E c L D A b e X Y Y1 C SOT23 Type DN Dim Min Max Typ A 0.89 1.12 1.00 A1 0.01 0.10 0.05 b 0.30 0.51 0.45 c 0.08 0.20 0.10 D 2.80 3.04 3.00 E 2.10 2.64 2.42 E1 1.20 1.40 1.37 e 0.95 REF e1 1.90 REF L 0.25 0.60 0.30 L1 0.45 0.62 0.54 All Dimensions in mm Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9

Document number: DS42948 Rev. 3 - 3 8 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. FMMT411 IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. 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