FMMT3903 KEXIN | Alldatasheet
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www.kexin.com.cn2 SMD Type ICSMD Type Transistors FMMT3903 Marking Marking 1W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO IC=10ìA 60 V Collector-emitter breakdown voltage V (BR)CEO IC=1mA 40 V Emitter-base breakdown voltage V (BR)EBO IE=10ìA 6V Collector cutoff current I CEX VCE=30V, VBE(off) =3V 50 nA Emitter cut-off current I BEX VCE=30V, VEB(off) =3V 50 nA DC current gain * h FE IC=10mA, VCE=1V 50 150 Collector-emitter saturation voltage * V CE(sat) IC=10mA, IB=1mA IC=50mA, IB=5mA 0.2 0.3 V Base-emitter saturation voltage * V BE(sat) IC=10mA, IB=1mA IC=50mA, IB=5mA 0.65 0.85 0.95 V Current-gain-bandwidth product f T IC=10mA, VCE=20V f=100MHz 250 MHz Output capacitance C obo VCB=5V, IE=0, f=100KHz 4p F Input capacitance C ibo VBE=0.5V, IC=0, f=100KHz 8p F Noise figure NF VCE=5V IC=200ìA,Rg=2KÙ f=30Hz to 15KHz at-3dB points 6d B Delay time t d 35 ns Rise time t r 35 ns Storage time t s 175 ns Fall time t f 50 ns * Pulse test: tp 300ìs; d 0.02. VCC=3V, IC=10mA,IB1=1mA VBE(off)=0.5V VCC=3V, IC=10mA IB1=I B2=1mA