FMMT311 KEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
- 1. 09 1/1 SEMICONDUCTOR TECHNICAL DATA FMMT311 Revision No : 0 100V/540A 2-PACK MOSFET MODULE (Half - Bridge)
FEATURES
hLow RDS(on) hHigh frequency operation hdv/dt ruggedness hFast switching APPLICATION hMotor Control hElectric Vehicle, Automotive etc. INTERNAL CIRCUIT 22 ±0.3 90 ±0.3 9 ±0.3 5 ±0.3 24 ±0.2 54 ±0.3 62 ±0.3 72 ±0.3 24 ±0.2 5 ±0.5 9 ±0.5 15 ±0.5 9 ±0.3 4 ±0.3 2 ±0.2 2 ±0.2 72 ±0.3 80 ±0.3 M6 X 3 M4 X 4 S-1 S-2 S-3 S-6 S-5 S-4 4.2 6.4 ±0.2 ±0.2 ±0.2 MAXIMUM RATING (@Ta=25 Per Leg) CHARACTERISTIC SYMBOL RATING UNIT Drain-to Source Breakdown Voltage VDSS 100 V Gate to Source Voltage VGS 15 V Continuous Drain Current @TC=25 IC 876 A @TC=100 540 Isolation Voltage AC @ 1 minute VISO 2500 V Junction Temperature Tj -40 ~ 150 Storage Temperature Tstg -40 ~ 125 Weight of Module Weight 985 g Terminal Connection Torque(M4) M 2 Nm Terminal Connection Torque(M6) M 5 Nm OUTLINE DRAWING Unit : mm FMT02
- 1. 09 2/3 FMMT311 Revision No : 1 ELECTRICAL CHARACTERISTICS (@Ta=25 Per Leg, Unless otherwise noted) TEMPERATURE SENSOR (NTC Thermistor) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250ɵ , VGS=0V 100 - - V Breakdown Voltage Temperature Coefficient ǚBVDSS/ǚTj ID=5mA, Referenced to 25 - 0.17 - V/ Gate Threshold Voltage Vth VDS=VGS, ID=250ɵ 3.0 - 5.0 V Drain to Source Leakage Current IDSS VDS=100V, VGS=0V - - 20 ǺA VDS=100V, VGS=0V, Tj=125 - - 250 Gate to Source Leakage Current IGSS VGS=15V, with protection circuit - - 10 mA VGS=-15V, with protection circuit - - -10 mA Drain to Source ON Resistance RDS(ON) VGS=10V, ID=540A - 0.92 2 mʃ Dynamic Total Gate Charge Qg ID=540A, VDS=50V, VGS=10V - TBD - nCGate to Source Charge Qgs - TBD - Gate to Source Charge Qgd - TBD - Turn On Delay Time td(on) - TBD - ns Rise Time tr - TBD - Turn Off Delay Tine td(off) - TBD - Fall Time tr - TBD - Input Capacitance Ciss - TBD - Output Capacitance Coss - TBD - Reverse Transfer Capacitance Crss - TBD - pF Source-Drain Diode Ratings Continuous Source Current IS - - 540 A Pulsed Source Current ISP - - 3000 Diode Forward Voltage VSD ID=540A, VGS=0V - 1.1 - V Reverse Recovery Time trr - TBD - ns Reverse Recovery Charge Qrr - TBD - nC PARAMETER CONDITION VALUE UNITS B Constant 25/85 3450 K B Constant Tolerance - 3 % Resistance - 4.7 Kʃ Resistance Tolerance - 5 % Operating Temperature Range - -40 ~ +125
- 1. 09 3/3 FMMT311 Revision No : 1 200 VDS [V] ID [A] 100 300 400 500 Fig 1. Saturation Voltage Characteristics VGS = 10V VGS = 9V VGS = 6V VGS = 5V Common Source Tc = 25¡É IF [A] VF [V] Fig 2. Forward Characteristics of Inverse Diode 200 100 300 500 400 Tc = 25¡É