FMMDT5451 JIANGSU | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR

DESCRIPTION

PNP and NPN Epitaxial Silicon Transistor

FEATURES

z Complementary Pair z One 5551-Type NPN, One 5401-Type PNP z Ultra-Small Surface Mount Package APPLICATION Ideal for Medium Power Amplification and Switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: KNM KNM

5551 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage V IC Collector Current -Continuous 0.2 A PC Collector Dissipation 0.15 W RθJA Thermal Resistance, Junction to Ambient 625 K/W TJ Junction Temperature 150 Tstg Storage Temperature range -55-150

5401 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

-160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage V IC Collector Current -Continuous -0.2 A PC Collector Dissipation 0.15 W RθJA Thermal Resistance, Junction to Ambient 625 K/W TJ Junction Temperature 150 Tstg Storage Temperature range -55-150 WBFBP-06C (2×2×0.5) unit: mm E1,B1,C1=NPN 5551 Section E2,B2,C2=PNP 5401 Section

5551 ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Collector-base breakdown voltage V(BR)CBO Ic=100µA,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE= 10µA, IC=0 V Collector cut-off current ICBO VCB= 120V IE=0 nA Emitter cut-off current IEBO VEB= 4V, IC=0 nA hFE（1） VCE= 5 V, IC= 1 mA hFE（2） VCE= 5 V, IC = 10 mA 250 DC current gain hFE（3） VCE= 5 V, IC= 50 mA IC= 10 mA, IB= 1 mA 0.15 Collector-emitter saturation voltage VCEsat IC= 50 mA, IB= 5 mA 0.2 V IC= 10 mA, IB= 1 mA Base-emitter saturation voltage VBEsat IC= 50 mA, IB= 5 mA V Transition frequency fT VCE=10V,IC=10mA,,f=100MHz 100 300 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz pF Noise figure NF VCE=5V,Ic=0.2mA, f=1KHZ,Rg=1kΩ dB

5401 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Collector-base breakdown voltage V(BR)CBO IC=-100µA , IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 V Collector cut-off current ICBO VCB=-120 V , IE=0 -0.05 µA Emitter cut-off current IEBO VEB=-3V , IC=0 -0.05 µA hFE(1) VCE=-5 V, IC= -1mA hFE(2) VCE=-5 V, IC= -10mA 240 DC current gain hFE(3) VCE=-5 V, IC= -50mA VCE(sat)1 IC=-10 mA, IB=-1mA -0.2 V Collector-emitter saturation voltage VCE(sat)2 IC=-50 mA, IB=-5mA -0.5 V VBE(sat)1 IC= -10 mA, IB=-1mA V Base-emitter saturation voltage VBE(sat)2 IC= -50 mA, IB=-5mA V Transition frequency f T VCE= -10V, IC= -10mA f = 100MHz 100 300 MHz Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz pF Noise Figure NF VCE= -5.0V, IC= -200µA, RS= 10Ω,f = 1.0kHz 8.0 dB

Min. Max. Min. Max. A 0.450 0.550 0.018 0.022 0.000 0.100 0.000 0.004 b 0.150 0.250 0.006 0.010 D 1.900 2.100 0.075 0.083 E 1.900 2.100 0.075 0.083 e L k z Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP. 0.026 TYP. 0.590 REF. 0.023 REF. 0.590 REF. 0.023 REF. 0.300 REF. 0.012 REF. 0.500 REF. 0.020 REF. 0.400 REF. 0.016 REF.