FMM7G30US60N

FMM7G30US60N FAIRCHILD | Alldatasheet

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 Short Circuit rated Time ; 10us @ T C =100°C, VGE = 15V  High Speed Switching  Low Saturation Voltage : V CE(sat) = 2.1 V @ IC = 30A  High Input Impedance  Built in Brake & 3 Phase Rectifier Circuit  Fast & Soft Anti-Parallel FWD  Built-in NTC Thermistor  UL Certified No. E209204 Application  AC & DC Motor Controls  General Purpose Inverters  Robotics  Servo Controls Internal Circuit Diagram R S T P P+ B GB GU EU GV EV -GV U GW EW V -GW W -GU E NTC T1 T2 NN - Package Code : 24PM-AA Absolute Maximum Ratings TC = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Symbol Description FMM7G30US60N Units Inverter Brake VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ T C = 80°C3 0 A ICM (1) Pulsed Collector Current 60 A IF Diode Continuous Forward Current @ T C = 80°C3 0 A IFM Diode Maximum Forward Current 60 A PD Maximum Power Dissipation @ T C = 25°C 104 W TSC Short Circuit Withstand Time @ T C = 100°C1 0 u s Converter VRRM Repetitive Peak Reverse Voltage 1600 V IO Average Output Rectified Current 30 A IFSM Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 300 A I2t Energy pulse @ 1Cycle at 60Hz 369 A 2s Common TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C VISO Isolation Voltage @ AC 1minute 2500 V Mounting Torque Mounting part Screw @ M4 4.0 N.m

©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A FMM7G30US60N Electrical Characteristics of IGBT @ Inverter & Brake TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage V GE = 0V, IC = 250uA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current V CE = VCES, VGE = 0V -- -- 250 uA IGES Gate - Emitter Leakage Current V GE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) Gate - Emitter Threshold Voltage I C = 30mA, VCE = VGE 5.0 6.5 8.5 V VCE(sat) Collector to Emitter Saturation Voltage I C = 30A, VGE = 15V -- 2.1 2.7 V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 2100 -- pF Coes Output Capacitance -- 270 -- pF Cres Reverse Transfer Capacitance -- 36 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 30A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 25°C -- 110 150 ns tr Rise Time -- 90 200 ns td(off) Turn-Off Delay Time -- 150 200 ns tf Fall Time -- 130 250 ns Eon Turn-On Switching Loss -- 0.9 -- mJ Eoff Turn-Off Switching Loss -- 0.58 -- mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 30A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 125°C -- 100 150 ns tr Rise Time -- 90 200 ns td(off) Turn-Off Delay Time -- 150 200 ns tf Fall Time -- 200 400 ns Eon Turn-On Switching Loss -- 0.98 -- mJ Eoff Turn-Off Switching Loss -- 0.9 -- mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V Qg Total Gate Charge VCE = 300 V, IC = 30A, VGE = 15V -- 90 150 nC Qge Gate-Emitter Charge -- 20 40 nC Qgc Gate-Collector Charge -- 35 70 nC

©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A FMM7G30US60N Electrical Characteristics of DIODE @ Inverter & Brake TC = 25°C unless otherwise noted Electrical Characteristics of DIODE @ Converter TC = 25°C unless otherwise noted Thermal Characteristics NTC Thermistor Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage I F = 30A trr Diode Reverse Recovery Time IF = 30A di / dt = 60 A/us TC = 25°C -- 90 180 nsTC = 100°C -- 130 -- Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge TC = 25°C -- 400 600 nCTC = 100°C -- 880 -- Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage I F = 30A IRRM Repetitive Reverse Current V R = VRRM Symbol Parameter Typ. Max. Units Inverter RθJC Junction-to-Case (IGBT Part, per 1/6 Module) -- 1.2 °C/W RθJC Junction-to-Case (DIODE Part, per 1/6 Module) -- 1.5 °C/W Brake RθJC Junction-to-Case (IGBT Part) -- 1.2 °C/W RθJC Junction-to-Case (DIODE Part) -- 1.5 °C/W Converter R θJC Junction-to-Case (DIODE Part, per 1/6 Module) -- 1.3 °C/W Weight Weight of Module 210 -- g Symbol Parameter Tol. Typ. Units Thermistor R25 Rated Resistance @ Tc = 25°C +/- 5 % 5.0 K Ω R100 Rated Resistance @ Tc = 100 °C +/- 5 % 0.415 K Ω B(25/100) B - Value +/- 3 % 3692

©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A FMM7G30US60N 0.005 0.01 0.1 IGBT : DIODE : Thermal Response, Zthjc [℃/W] Rectangular Pulse Duration [sec] 0.1 1 10 1000 2000 3000 4000 5000 Common Emitter V GE = 0 V, f = 1 MHz T C = 25 o C Cres Coes Cies Coll ector - Emitter Voltage, V CE [V] Capacitance [pF] 0 1 2 3 4 5 6 100 20V 18V 16V 15V 14V 12V VGE = 10V Coll ector - Emitter Voltage, V CE(sat) [V] Coll ector Current, I C [A] Common Emitter TC = 25 o C 1 10 100 120 Common Emitter VGE = 15 V TC = 25℃ ━━ Coll ector - Emitter Voltage, V CE(sat) [V] Coll ector Current, I C [A] -50 0 50 100 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 30 A 15 A 60 A Coll ector - Emitter Voltage, V CE(sat) [V] Case Temperature, T C [o C] Common Emitter VGE = 15 V 0 1 2 3 4 5 6 100 20V 18V 15V 16V 14V 12V VGE = 10V Coll ector - Emitter Voltage, V CE(sat) [V] Coll ector Current, I C [A] Common Emitter TC = 125 o C Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Fig 3. Typical Saturation Voltage Characteristics Fig 5. Transient Thermal Impedance Fig 6. Capacitance Characteristics Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level

©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A FMM7G30US60N 20 30 40 50 60 100 1000 10000 Eoff Eon Common Emitter VGE = ± 15V, RG = 15Ω TC = 25℃ ━━ Switchi ng Loss [uJ] Coll ector Current, I C [A] 20 30 40 50 60 100 1000 Tf Toff Coll ector Current, I C [A] Switchi ng Ti me [ns] Common Emitter VGE = ± 15V, RG = 15Ω TC = 25℃ ━━ 20 30 40 50 60 100 1000 Ton Tr Switching Ti me [ns] Coll ector Current, I C [A] Common Emitter VGE = ± 15V, RG = 15Ω TC = 25℃ ━━ 20 40 60 80 100 100 1000 10000 Eon Eoff Gate Resistance, Rg[ Ω Switching Loss [uJ] Common Emitter VCC = 300V, VGE = ± 15V IC = 30A TC = 25℃ ━━ 20 40 60 80 100 100 1000 Tr Ton Gate Resistance, Rg[ Ω Switching Ti me [ns] Common Emitter VCC = 300V, VGE = ± 15V IC = 30A TC = 25℃ ━━ 20 40 60 80 100 100 1000 Tf Toff Gate Resistance, Rg[ Ω Switching Ti me [ns] Common Emitter VCC = 300V, VGE = ± 15V IC = 30A TC = 25℃ ━━ Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Switching Loss vs. Collector Current Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current

©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A FMM7G30US60N 0 400 800 1200 1600 1E-3 0.01 0.1 100 1000 25℃ TC = 125℃ VR, Reverse Voltage [V] I R, Reverse Current [uA] 5 1 01 52 02 53 0 0.5 Common Cathode di/dt = 60A/us T C = 25 ℃ TC = 100℃ Irr Trr Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [x10ns] Forward Current, I F [A] 01234 Common Cathode VGE = 0V TC = 25 ℃ TC = 125 ℃ Forward Current, I F [A] Forward Voltage, V F [V] 0 100 200 300 400 500 600 700 0.1 100 Single Nonrepetitive Pulse T J ≤ 125℃ VGE = 15V RG = 15 Ω Collector Current, I C [A] Collector-Emitter Voltage, V CE [V] 0 20 40 60 80 100 0369 300 V 200 V V CC = 100 V Common Emitter R L = 10 Ω T C = 25 o C Gate - Emitter Voltage, V GE [V] Gate Charge, Q g [nC] Fig 13. Gate Charge Characteristics Fig 14. RBSOA Characteristics Fig 15. Forward Characteristics Fig 16. Reverse Recovery Characteristics Fig 17. Rectifier( Converter ) Characteristics Fig 18. Rectifier( Converter ) Characteristics 0.1 100 25℃ TC =125℃ VF, Forward Voltage [V] IF, Instantaneous Forward Current [A]

©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A FMM7G30US60N -25 0 25 50 75 100 125 Temperature, T [o C] Resistance, R[K Ω -25 0 25 50 75 100 3400 3450 3500 3550 3600 3650 3700 3750 3800 Temperature [o C] B 25/X Constant Fig 20. NTC CharacteristicsFig 19. NTC Characteristics

©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A FMM7G30US60N Dimensions in Millimeters Package Dimension 24PM-AA 41.90-7.6217 41.90-15.2416 41.90-19.0515 41.90-26.6714 41.90-30.4813 41.90-38.1012 41.90-41.9111 36.19-66.2710 28.57-66.279 41.907.6221 41.903.8120 41.900.019 41.90-3.8118 13.33-66.278 yx 12.93 12.93 12.93 -66.27 -57.15 -45.72 -34.29 -22.86 -11.43 0.0 CoordinatePin #No 13.3324 28.5723 32.3822 5.717 0.06 0.05 0.04 0.03 0.02 0.01 -. Pin Coordinate

• datum pin : #1  Pin Tilt : ±0.20 93.0 ±0.30 107.0 ±0.80 45.0 ±0.80 35.0 ±0.30 41.9 ±0.30 2-Ø5.5 ±0.30 Mounting-Hole 10 21 26.67±0.20 20.95±0.20 16.8±0.50 15.3±0.50 32.0±1.00 1.15 ±0.20 * 0.8t Name Plate 42.7±0.50 4-Ø6.0 7.1

©2003 Fairchild Semiconductor Corporation TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2 FACT™ FACT Quiet series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TruTranslation™ UHC™ UltraFET® VCX™ ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™