FMM6G30US60

FMM6G30US60 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• Short Circuit rated Time ; 10us @ TC =100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 30A
• High Input Impedance
• 3 Phase Rectifier Circuit
• Fast & Soft Anti-Parallel FWD
• Built-in NTC Thermistor
• UL Certified No. E209204 Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS Internal Circuit Diagram R S T P GU EU GV EV -GV U GW EW V -GW W -GU E NTC N Package Code : 24PM-AA Absolute Maximum Ratings TC = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Symbol

Description

V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 80°C A ICM (1) Pulsed Collector Current A IF Diode Continuous Forward Current @ TC = 80°C A IFM Diode Maximum Forward Current A PD Maximum Power Dissipation @ TC = 25°C 104 W TSC Short Circuit Withstand Time @ TC = 100°C us Converter VRRM Repetitive Peak Reverse Voltage 1600 V IO Average Output Rectified Current A IFSM Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 300 A I2t Energy pulse @ 1Cycle at 60Hz 369 A2s Common TJ Operating Junction Temperature -40 to +150 TSTG Storage Temperature Range -40 to +125 VISO Isolation Voltage @ AC 1minute 2500 V Mounting Torque Mounting part Screw @ M4 4.0 N.m

©2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A FMM6G30US60 Electrical Characteristics of IGBT @ Inverter TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA 0.6 V/°C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V 250 uA IGES Gate - Emitter Leakage Current VGE = VGES, VCE = 0V ± 100 nA On Characteristics VGE(th) Gate - Emitter Threshold Voltage IC = 30mA, VCE = VGE 5.0 6.5 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 30A, VGE = 15V 2.1 2.7 V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2100 pF Coes Output Capacitance 270 pF Cres Reverse Transfer Capacitance pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 30A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 25°C 110 150 ns tr Rise Time 200 ns td(off) Turn-Off Delay Time 150 200 ns tf Fall Time 130 250 ns Eon Turn-On Switching Loss 0.9 mJ Eoff Turn-Off Switching Loss 0.58 mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 30A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 125°C 100 150 ns tr Rise Time 200 ns td(off) Turn-Off Delay Time 150 200 ns tf Fall Time 200 400 ns Eon Turn-On Switching Loss 0.98 mJ Eoff Turn-Off Switching Loss 0.9 mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C us Qg Total Gate Charge VCE = 300 V, IC = 30A, VGE = 15V 150 nC Qge Gate-Emitter Charge nC Qgc Gate-Collector Charge nC

©2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A FMM6G30US60 Electrical Characteristics of DIODE @ Inverter TC = 25°C unless otherwise noted Electrical Characteristics of DIODE @ Converter TC = 25°C unless otherwise noted Thermal Characteristics NTC Thermistor Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage IF = 30A TC = 25°C 2.0 2.8 V TC = 100°C 2.0 trr Diode Reverse Recovery Time IF = 30A di / dt = 60 A/us TC = 25°C 180 ns TC = 100°C 130 Irr Diode Peak Reverse Recovery Current TC = 25°C 2.2 3.4 A TC = 100°C 3.4 Qrr Diode Reverse Recovery Charge TC = 25°C 400 600 nC TC = 100°C 880 Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage IF = 30A TC = 25°C 1.1 1.5 V TC = 100°C 1.0 IRRM Repetitive Reverse Current VR = VRRM TC = 25°C mA TC = 100°C Symbol Parameter Typ. Max. Units Inverter RθJC Junction-to-Case (IGBT Part, per 1/6 Module) 1.2 °C/W RθJC Junction-to-Case (DIODE Part, per 1/6 Module) 1.5 °C/W Converter RθJC Junction-to-Case (DIODE Part, per 1/6 Module) 1.3 °C/W Weight Weight of Module 210 g Symbol Parameter Tol. Typ. Units Thermistor R25 Rated Resistance @ Tc = 25°C +/- 5 % 5.0 KΩ R100 Rated Resistance @ Tc = 100 °C +/- 5 % 0.415 KΩ B(25/100) B - Value +/- 3 % 3692

©2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A FMM6G30US60 0.005 0.01 0.1 IGBT : DIODE : Thermal Response, Zthjc [℃/W] Rectangular Pulse Duration [sec] C o m m o n E m i t t e r V G E V f M H z T C oC C r e s C o e s C i e s C o l l e c t o r E m i t t e r V o l t a g e V C E V C a p a c i t a n c e p F 20V 18V 16V 15V 14V 12V VGE = 10V C o l l e c t o r E m i t t e r V o l t a g e V C E s a t V C o l l e c t o r C u r r e n t IC A Common Emitter TC = 25 oC Common Emitter VGE = 15 V TC = 25℃ ━━ C o l l e c t o r E m i t t e r V o l t a g e V C E s a t V C o l l e c t o r C u r r e n t IC A 30 A 15 A 60 A C o l l e c t o r E m i t t e r V o l t a g e V C E s a t V C a s e T e m p e r a t u r e T C oC Common Emitter VGE = 15 V 20V 18V 15V 16V 14V 12V VGE = 10V C o l l e c t o r E m i t t e r V o l t a g e V C E s a t V C o l l e c t o r C u r r e n t IC A Common Emitter TC = 125 oC Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Fig 3. Typical Saturation Voltage Characteristics Fig 5. Transient Thermal Impedance Fig 6. Capacitance Characteristics Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level

©2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A FMM6G30US60 E o f f E o n Common Emitter VGE = ± 15V, RG = 15Ω TC = 25℃ ━━ S w i t c h i n g L o s s u J C o l l e c t o r C u r r e n t IC A T f T o f f C o l l e c t o r C u r r e n t IC A S w i t c h i n g T i m e n s Common Emitter VGE = ± 15V, RG = 15Ω TC = 25℃ ━━ T o n T r S w i t c h i n g T i m e n s C o l l e c t o r C u r r e n t IC A Common Emitter VGE = ± 15V, RG = 15Ω TC = 25℃ ━━ E o n E o f f G a t e R e s i s t a n c e R g Ω S w i t c h i n g L o s s u J Common Emitter VCC = 300V, VGE = ± 15V IC = 30A TC = 25℃ ━━ T r T o n G a t e R e s i s t a n c e R g Ω S w i t c h i n g T i m e n s Common Emitter VCC = 300V, VGE = ± 15V IC = 30A TC = 25℃ ━━ T f T o f f G a t e R e s i s t a n c e R g Ω S w i t c h i n g T i m e n s Common Emitter VCC = 300V, VGE = ± 15V IC = 30A TC = 25℃ ━━ Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Switching Loss vs. Collector Current Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current

©2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A FMM6G30US60 E 25℃ TC = 125℃ VR, Reverse Voltage [V] I R, Reverse Current [uA] 0.5 Common Cathode di/dt = 60A/us TC = 25℃ TC = 100℃ Irr Trr Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [x10ns] Forward Current, IF [A] Common Cathode VGE = 0V TC = 25℃ TC = 125℃ Forward Current, I F [A] Forward Voltage, VF [V] 100 200 300 400 500 600 700 0.1 100 Single Nonrepetitive Pulse TJ ≤ 125℃ VGE = 15V RG = 15 Ω Collector Current, I C [A] Collector-Emitter Voltage, VCE [V] Fig 13. Gate Charge Characteristics Fig 14. RBSOA Characteristics Fig 15. Forward Characteristics Fig 16. Reverse Recovery Characteristics Fig 17. Rectifier( Converter ) Characteristics Fig 18. Rectifier( Converter ) Characteristics V V V C C V C o m m o n E m i t t e r R L Ω T C oC G a t e E m i t t e r V o l t a g e V G E V G a t e C h a r g e Q g n C 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 25℃ TC =125℃ VF, Forward Voltage [V] IF, Instantaneous Forward Current [A]

©2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A FMM6G30US60 T e m p e r a t u r e T oC R e s i s t a n c e R K Ω T e m p e r a t u r e oC B X C o n s t a n t Fig 20. NTC Characteristics Fig 19. NTC Characteristics

©2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A FMM6G30US60 Dimensions in Millimeters Package Dimension 24PM-AA 41.90 -7.62 41.90 -15.24 41.90 -19.05 41.90 -26.67 41.90 -30.48 41.90 -38.10 41.90 -41.91 36.19 -66.27 28.57 -66.27 41.90 7.62 41.90 3.81 41.90 0.0 41.90 -3.81 13.33 -66.27 y x 12.93 12.93 12.93 -66.27 -57.15 -45.72 -34.29 -22.86 -11.43 0.0 Coordinate Pin #No 13.33 28.57 32.38 5.71 0.0 0.0 0.0 0.0 0.0 0.0 -. Pin Coordinate

• datum pin : #1
• Pin Tilt : ±0.20 93.0 ±0.30 107.0 ±0.80 45.0 ±0.80 35.0 ±0.30 41.9 ±0.30 2-Ø5.5 ±0.30 Mounting-Hole 26.67±0.20 20.95±0.20 16.8±0.50 15.3±0.50 32.0±1.00 1.15 ±0.20 * 0.8t Name Plate 42.7±0.50 4-Ø6.0 7.1

©2003 Fairchild Semiconductor Corporation TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2 FACT™ FACT Quiet series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TruTranslation™ UHC™ UltraFET® VCX™ ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™