FMM5046VF FUJITSU | Alldatasheet

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Technical content

Edition 1.5 November 2001 FMM5046VF GaAs MMIC

DESCRIPTION

The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the 1.7 to 2.3GHz band. The output stage is partially matched for this device.

FEATURES

  • High Output Power: 36dBm (typ.)
  • High Linear Gain: 30dB (typ.)
  • Low Input VSWR
  • Small Hermetic Metal-Ceramic Package (VF) Item Frequency Range Output Power at 1dB G.C.P. Linear Gain Input VSWR DC Input Current DC Input Current Symbol f 2.2 35.0 36.0 - 29.0 30.0 - - 1.5:1 - - 1.1 - VDD = 10V VGG = -5V f = 2.2GHz GHz dBm dB A -3 5- m A P1dB GL VSWRi IDD IGG Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) CASE STYLE: VF G.C.P.: Gain Compression Point Item DC Input Voltage DC Input Voltage Input Power Storage Temperature Operating Case Temperature Symbol VDD 12 -55 to +125 -40 to +70 V V dBm VGG Pin Tstg Top Rating Unit ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs modules: 1. The drain operating voltage (VDD) should not exceed 10 volts. 2. The gate operating voltage (VGG) should not exceed -5 volts.

OUTPUT POWER vs. FREQUENCY 10dBm 6dBm 2dBm -2dBm -6dBm -10dBm Frequency (GHz) 40Output Power (dBm) VDD=10V, VGG=-5V, f=2.2GHz VDS=10V, VGG=-5V OUTPUT POWER & IDSRF vs. INPUT POWER -6-8-10 -4 -2 0 2 4 6 8 10 Input Power (dBm) 1.2 1.4 1.6 1.8 2.0 Output Power (dBm) IDS(RF) (A) 5MHz 10MHz IMD vs. OUTPUT POWER 18 20 22 24 26 28 30 32 34 Total Output Power (dBm) -60 -55 -50 -45 -40 -35 -30 -25 -20 IMD (dBc) VDS=10V, VGG=-5V, f1=2.14GHz, W-CDMA, Single Signal VDS=10V, VGG=-5V, f1=2.14GHz, ∆f=10MHz, ACPR vs. OUTPUT POWER 18 20 22 24 26 28 30 32 34 Output Power (dBm) -60 -55 -50 -45 -40 -35 -30 -25 -65 -70 ACPR (dBc)

VDD = 10V, VGG = -5V FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG FMM5046VF GaAs MMIC +j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 0.01 0.02 10 25 100 2.7GHz 2.7GHz SCALE FOR |S21| SCALE FOR |S12| 2.7GHz 2.7GHz1.7 1.7 1.8 1.8 1.9 1.9 2.0 2.0 2.1 2.1 2.2 2.2 2.3 2.3 2.5 2.5 2.6 2.6 2.4 8 16 24 32 2.5 2.4 2.4 2.3 2.3 2.2 2.1 2.0 2.0 1.9 1.8 1.7 1.7 2.6

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Unit: mm(inches) PIN ASSIGNMENT Pin Symbol 1. V DD 2. RF in 3. V GG 4. NC 5. RF out 6. V DD Case Style "VF" INDEX 4-C 1.52 1.0 MIN1.0 MIN 8.33±0.25 6.63 2.44 (4-R 0.5)2-0.3 456 321 4-0.5 0.5±0.15 0.5 ±0.15 2-R 1.22 6.4 13.46±0.15 17.78±0.15 6.63 0.125±0.15 1.02±0.15

3.0 MAX

7.88 0.51±0.15 0.3±0.15