FMM5017VF FUJITSU | Alldatasheet

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Technical content

Edition 1.1 August 1999 FMM5017VF GaAs MMIC

DESCRIPTION

The FMM5017VF is a MMIC amplifier designed for VSAT applications as a driver or output stage in the 14.0 to 14.5 GHz band. This device is well suited for designs that require less than 1 Watt and lower cost. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

FEATURES

  • High Output Power: 29dBm (typ.)
  • High Linear Gain: 20dB (typ.)
  • Low In/Out VSWR
  • Integrated Output Power Monitor
  • Impedance Matched Zin/Zout = 50Ω
  • Small Hermetic Metal-Ceramic Package (VF) Item Frequency Range Output Power at 1dB G.C.P. Linear Gain Gain Flatness Input VSWR Output VSWR Power Monitor DC Input Current DC Input Current Symbol f 14.0 ~ 14.5 Pout = 28.0dBm 28.0 29.0 - 18.0 20.0 - - 1.0 1.5 - 2:1 2.3:1 - 2.3:1 3:1 - 2.5 - - 700 1000 VDD = 10V VGG = -5V f = 14.0 to 14.5 GHz VDD = 10V VGG = -5V GHz dBm dB dB mA V - 15 20 mA P1dB G VSWRi VSWRo IDD Vmon IGG Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) CASE STYLE: VF Item DC Input Voltage DC Input Voltage Input Power Storage Temperature Operating Case Temperature Symbol VDD 12 -55 to +125 -40 to +85 V V dBm VGG Pin Tstg Top Rating Unit ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

OUTPUT POWER vs. FREQUENCY 14.0 Pin=12dBm 10dBm 8dBm 6dBm 4dBm 2dBm Frequency (GHz) Output Power (dBm) VDD=10V VGG=-5V f=14.25GHZ VDD=10V VGG=-5V P1dB OUTPUT POWER vs. INPUT POWER 2 4 6 8 10 12 Input Power (dBm) Output Power (dBm) 50Ω 50Ω 50Ω50Ω 1000pF 1000pF 1000pF1000pF VDD VGG VDD Pmon3 Recommended Bias Circuit

+j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 510 25 100 14.7GHz 14.7GHz 13.8GHz 13.8GHz 14.7GHz 13.8GHz13.8GHz 0.02 SCALE FOR |S12| SCALE FOR |S21| 14.7GHz 1015 0.06 0.04 S-PARAMETERS VDD = 10V, VGG = -5V FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG 321 456 321 456 321 456 Pin Configuration

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. INDEX Unit: mm(inches) 4-C 1.52 (0.060)

1.0 MIN

(0.039) (0.039) 8.33 (0.328) 6.63 (0.261) 2.44 (0.096) (4-R 0.5) (0.020) 2-0.3 (0.012) 456 321 4-0.5 (0.020) 2-R 1.22 (0.048) 6.4 (0.253) 8.38 (0.330) 13.46 (0.530) 17.78 (0.70) PIN ASSIGNMENT Pin Symbol 1. V DD 2. RF in 3. V GG 4. Pmon 5. RF out 6. V DD Case Style "VF" 6.63 (0.260) 0.125 (0.005) 1.02 (0.040)

3.0 MAX

(0.118)7.88 (0.310) 0.51 (0.020)