FMM23N20 FCI | Alldatasheet
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Technical content
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOMMaximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limit Unit VDS 20 VGS ± 8 ID 2.3 IDM 10 TA = 25oC 0.9 TA = 75oC 0.57 TJ, Tstg -55 to 150 oC EAS mJ RθJC Junction-to-Ambient Thermal Resistance (PCB mounted) R θJA 145 Note: 1. Maximum DC current limited by the package 2. 1-in 2oz Cu PCB board Feb '06 Rev 1 1 Avalanche Energy with Single Pulse ID=50A, VDD=25V, L=0.5mH Operating Junction and Storage Temperature Range Continuous Drain Current Gate-Source Voltage Maximum Power Dissipation N-Channel MOSFET oC/W Junction-to-Case Thermal Resistance Parameter V A W Drain-Source Voltage PD Pulsed Drain Current Top View Internal Schematic DiagramTO-236 (SOT-23) Gate Drain Source
FMM23N20 2.3A 20V N-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BV DSS VGS = 0V, ID = -10uA 20 - - V Drain-Source On-State Resistance R DS(on) VGS = 4.5V, ID = 2.8A 45 60 Drain-Source On-State Resistance R DS(on) VGS = 2.5V, ID = 2.0A 70 115 mΩ Gate Threshold Voltage V GS(th) VDS =VGS, ID = 250uA 0.65 0.95 1.20 V Zero Gate Voltage Drain Current I DSS VDS = 9.6V, VGS = 0V -1 uA Gate Body Leakage I GSS VGS = ±8V, VDS = 0V ±100 nA Gate Resistance Rg Ω Forward Transconductance g fs VDS = 5V, ID = 4.0A 6.5 S Dynamic Total Gate Charge Qg 3.69 Gate-Source Charge Q gs 0.70 Gate-Drain Charge Q gd 1.06 Turn-On Delay Time t d(on) 6.16 Turn-On Rise Time t r 7.56 Turn-Off Delay Time t d(off) 16.61 Turn-Off Fall Time t f 4.07 Input Capacitance C iss 427.12 Output Capacitance C oss 80.56 Reverse Transfer Capacitance C rss 57.00 Source-Drain Diode Max. Diode Forward Current I S A Diode Forward Voltage V SD IS = -1.6A, VGS = 0V V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% Feb '06 Rev 1 2 N-Channel Enhancement-Mode MOSFET VDS = 6V, VGS = 0V f = 1.0 MHz pF nC VDD = 6V, RL = 6Ω ΙD = 1Α, VGEN = 4.5V RG = 6Ω ns VDS = 6V, ID = 2.8A VGS = 4.5V