FML9

FML9 ROHM | Alldatasheet

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General purpose transistor (isolated transistor and diode) FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. !!!!Applications DC / DC converter Motor driver !!!!Features 1) Tr : Low V CE(sat) Di : Low VF 2) Small package !!!!Structure Silicon epitaxial planar transistor Schottky barrier diode !!!!Equivalent circuit Tr1Di2 (5)(4)(3) (2) (1) !!!!Packaging specifications Type FML9 SMT5 TR 3000 Package Marking Code Basic ordering unit(pieces) !!!!External dimensions (Units : mm) FML9 ROHM : SMT5 EIAJ : SC-74A 0~0.1 1.1 0.8 0.3Min. 0.15 1.6 2.8 2.9 0.95 1.9 (4)(5) (1) 0.3 (3) 0.95 (2) Each lead has same dimensions

!!!!Absolute maximum ratings (Ta=25°C) Tr1 Parameter Symbol VCBO VCEO VEBO IC ICP Pc Tj Tstg Limits −15 −12 −1.5 200 150 −40~+125 Unit V V V A A mW ∗1 Single pulse, Pw=1ms. ∗2 Each terminal mounted on a recommended land. Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Di2 Parameter Symbol IF IFSM VR Tj Tstg Limits 700 125 −40~+125 Unit mA A V Average rectified forward current Forward current surge peak (60HZ, 1∞) Reverse voltage (DC) Junction temperature Range of storage temperature !!!!Electrical characteristics (Ta=25°C) Tr1 Transition frequency Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Collector output capacitance Parameter Symbol Min. Typ. Max. Unit Conditions VCB=−10V, IE=0mA, f=1MHz fT − 400 − MHz VCE=−2V, IE=200mA, f=100MHz BVCEO −12 −− V IC=−1mA BVCBO −15 −− V IC=−10µA BVEBO −6 −− V IE=−10µA ICBO −− −100 nA V CB=−15V IEBO −− −100 nA V EB=−6V VCE(sat) −− 110 −200 mV IC=−500mA, IB=−25mA hFE 270 − 680 − VCE=−2V, IC=−200mA Cob − 12 − pF Di2 Parameter Min. Typ. Max. Unit Conditions − 490− mV I F=700mA VR=20V Symbol VF IR − − 200 µA Forward voltage Reverse current

!!!!Electrical characteristic curves Tr1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current DC CURRENT GAIN : hFE 1000 100 Ta=100°C Ta=−40°C Ta=25°C VCE=−2V Pulsed 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.2 Base-emitter saturation voltage vs. collector current 0.001 0.01 0.1 IC/IB=20/1 VCE=−2V Pulsed Ta=100°C Ta=100°C Ta=−40°C Ta=−40°C VBE(sat) VCE(sat) Ta=25°C Ta=25°C BASE SATUATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs. collector current 0.001COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.01 0.1 Ta=25°C Pulsed IC/IB=10/1 IC/IB=20/1 IC/IB=50/1 0 0.5 1 1.5 BASE TO EMITTER CURRENT : VBE(on) (V) Fig.4 Grounded emitter propagation characteristics

0.001 COLLECTOR CURRENT : IC (A)

0.01 0.1 VCE=−2V Pulsed Ta=100°C Ta=−40°C Ta=25°C 0.001 0.01 0.1 1 10 EMITTER CURRENT : IE (A) Fig.5 Gain bandwidth product vs. emitter current TRANSITION FREQUENCY : fT (MHz) 1000 100 Ta=25°C VCE=−2V f=100MHz 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Switching time 10000 100 1000 Ta=25°C VCE=−5V f=100MHz tstg tdon tf tr SWITCHING TIME : (ns) 1 10 1000.1 100 1000 f=1MHz IE=0mA Ta=25˚C COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Cib Cob EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) 0.01 0.1 1 10 100 Fig.8 Safe operation area 0.01 0.1 Ta=25°C Single Pulsed DC Operation PW=100ms 10ms 1ms COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A)

0.1m 10m 100m FORWARD CURRENT : IF (A) FORWARD VOLTAGE : VF (V) Fig.9 Forward characteristics Ta=125 Ta Ta =25 0.1µ 10µ 100µ 10m 100m 1000mREVERSE CURRENT : IR (A) REVERSE VOLTAGE : VR (V) 01 0 20 30 40 50 60 70 Fig.10 Reverse characteristics Ta=25°C Ta=−25°C Ta=125°C