FML9

FML9 KEXIN | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

www.kexin.com.cn 1 SMD Type Transistors General purpose transistor (isolated transistor and diode) FML9 ■ Features

• Tr1: Low VCE(sat)
• Di : Low VF
• Small package ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -6 V Collector current IC -1.5 A Power dissipation PD 200 mW Operating and Storage and Temperature Range Tj, TSTG -40 to +125 ℃ Parameter Symbol Rating Unit Reak reverse voltage VRM 25 V Reverse voltage (DC) VR 20 V Average rectified forward current IF 700 mA Forward current surge peak (60HZ, 1∞) IFSM 3 A Operating and Storage and Temperature Range Tj, TSTG -40 to +125 ℃ Tr1 Di2 Unit: mm Tr1Di2 (4) (5) (1)(2)(3)

SMD Type ICSMD Type Transistors ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = -10 μA, IE = 0 -15 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1 mA, IB = 0 -12 V Emitter-Base Breakdown Voltage V(BR)EBO IC = -10 μA, IC = 0 -6 V Collector cutoff current ICBO VCB=-15V, IE=0 -100 nA Emitter cutoff current IEBO VEB=-6V, IC=0 -100 nA DC current gain hFE VCE=-2V, IC= -200mA 270 680 collector-emitter saturation voltage * VCE(sat) IC = -500 mA; IB = -25 mA -0.2 V Transition frequency fT IC = -200 mA; VCE = -2 V; f = 100 MHz 400 MHz Collector output capacitance Cob VCB=-10V, IE=0A, f=1MHz 12 pF Forward voltage VF IF=700mA 490 mV Reverse current IR VR=20V 200 μA * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. Transistor TR1 Di2 ■ Marking Marking L9 FML9 www.kexin.com.cn 2

www.kexin.com.cn 3 SMD Type ICSMD Type Transistors ■ Typical Characteristics FML9 Tr1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : I C (A) Fig.1 DC current gain vs. collector current DC CURRENT GAIN : h FE 1000 100 Ta=100°C Ta=−40°C Ta=25°C V CE =−2V Pulsed 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : I C (A) Fig.2 Base-emitter saturation voltage vs. collector current 0.001 0.01 0.1 I C B =20/1 V CE =−2V Pulsed Ta=100°C Ta=100°C Ta=−40°C Ta=−40°C V BE (sat) V CE (sat) Ta=25°C Ta=25°C BASE SATUATION VOLTAGE : V BE(sat) (V) COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : I C (A) Fig.3 Collector-emitter saturation voltage vs. collector current 0.001 COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) 0.01 0.1 Ta=25°C Pulsed I C B =10/1 I C B =20/1 I C B =50/1 0 0.5 1 1.5 BASE TO EMITTER CURRENT : V BE(on) (V) Fig.4 Grounded emitter propagation characteristics 0.001 COLLECTOR CURRENT : I C (A) 0.01 0.1 V CE =−2V Pulsed Ta=100°C Ta=−40°C Ta=25°C 0.001 0.01 0.1 1 10 EMITTER CURRENT : I E (A) Fig.5 Gain bandwidth product vs. emitter current TRANSITION FREQUENCY : f T (MHz) 1000 100 Ta=25°C V CE =−2V f=100MHz 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : I C (A) Fig.6 Switching time 10000 100 1000 Ta=25°C V CE =−5V f=100MHz tstg tdon tf tr SWITCHING TIME : (ns) 1 10 1000.1 100 1000 f 1MHz I E 0mA Ta 25˚C COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Cib Cob EMITTER TO BASE VOLTAGE : V EB COLLECTOR TO BASE VOLTAGE : V CB 0.01 0.1 1 10 100 Fig.8 Safe operation area 0.01 0.1 Ta=25°C Single Pulsed DC Operation PW=100ms 10ms 1ms COLLECTOR TO EMITTER VOLTAGE : V CE (V) COLLECTOR CURRENT : I C (A)

SMD Type ICSMD Type Transistors FML9 www.kexin.com.cn 4 Di2 0.1m 10m 100m FORWARD CURRENT : I F (A) FORWARD VOLTAGE : V F (V) Fig.9 Forward characteristics Ta=125 Ta Ta =25 0.1µ 10µ 100µ 10m 100m 1000m REVERSE CURRENT : I R (A) REVERSE VOLTAGE : V R (V) 01 0 20 30 40 50 60 70 Fig.10 Reverse characteristics Ta=25°C Ta=−25°C Ta=125°C ■ Typical Characteristics