FML20N50

FML20N50 FCI | Alldatasheet

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Features

■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using high tek. advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. N-Channel MOSFET Symbol 2. Drain 3. Source 1. Gate TO-247 G SD FML20N50 20Amps 500 Voltage N Channel MOSFET

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 500 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C - 0.6 - V/°C IDSS Drain-Source Leakage Current VDS = 500V, VGS = 0V -- 1 0 u A VDS = 400V, TC = 125 °C -- 1 0 0 u A IGSS Gate-Source Leakage, Forward VGS = 30V, VDS = 0V -- 1 0 0 n A Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resis- tance VGS =10 V, ID = 10A -0 . 2 1 0 . 2 6 Ω gfs Forward Transconductance VDS =50V , ID =10.0A - 15 - S Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz - 3350 - pFCoss Output Capacitance - 490 - Crss Reverse Transfer Capacitance - 50 - Dynamic Characteristics td(on) Turn-on Delay Time VDD =250V, ID =20.0A, RG =25Ω (Note 4, 5) - 60 - ns tr Rise Time - 210 - td(off) Turn-off Delay Time - 170 - tf Fall Time - 130 - Qg Total Gate Charge VDS =400V, VGS =10V, ID =20.0A (Note 4, 5) - 90 - nCQgs Gate-Source Charge - 20 - Qgd Gate-Drain Charge(Miller Charge) - 42 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 2 0 AISM Pulsed Source Current - - 80 VSD Diode Forward Voltage I S =20.0A, VGS =0V - - 1.4 V trr Reverse Recovery Time IS=20.0A, VGS=0V, dIF/dt=100A/us -3 7 0 - n s Qrr Reverse Recovery Charge - 380 - nC ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 5.0mH, IAS =20.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 20.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. FML20N50 20Amps 500 Voltage N Channel MOSFET

50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L IAS 2----2 BVDSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L ID t p EAS =L IAS 2----2 AS =L IAS 2----2 1----2 BV DSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL IDID t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FML20N50 20Amps 500 Voltage N Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Dr i v e r R G Sam e Ty pe as D U T V GS • dv/ dt cont r ol l ed by R G

• I SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( D U T ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G a te P u ls e W id th DUT V DS Dr i v e r R G Sam e Ty pe as D U T V GS • dv/ dt cont r ol l ed by R G
• I SD cont r ol l ed by pul se per i od V DD LL I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( D U T ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G a te P u ls e W id th FML20N50 20Amps 500 Voltage N Channel MOSFET

15.60 ±0.20 9.60 ±0.20 2.00 ±0.20 3.00 ±0.20 ø3.20 ±0.10 3.80 ±0.20 13.90 ±0.20 3.50 ±0.20 16.50 ±0.30 12.76 ±0.20 19.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.50 +0.15 –0.05 0.60 +0.15 –0.05 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] TO-247 FML20N50 20Amps 500 Voltage N Channel MOSFET