FML10

FML10 KEXIN | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 3

Technical content

www.kexin.com.cn 1 SMD Type General purpose transistor (isolated transistor and diode) FML10 ■ Features

• Tr1: Low VCE(sat)
• Di : Low VF
• Small package ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V Collector current IC 1.5 A Power dissipation PD 200 mW Operating and Storage and Temperature Range Tj, TSTG -40 to +125 ℃ Parameter Symbol Rating Unit Reak reverse voltage VRM 25 V Reverse voltage (DC) VR 20 V Average rectified forward current IF 700 mA Forward current surge peak (60HZ, 1∞) IFSM 3 A Operating and Storage and Temperature Range Tj, TSTG -40 to +125 ℃ Tr1 Di2 Unit: mm Tr1Di2 (1)(2)(3) (4) (5) Transistors

■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = 10 μA, IE = 0 15 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 12 V Emitter-Base Breakdown Voltage V(BR)EBO IC = 10 μA, IC = 0 6 V Collector cutoff current ICBO VCB=15V, IE=0 100 nA Emitter cutoff current IEBO VEB=6V, IC=0 100 nA DC current gain hFE VCE=2V, IC= 200mA 270 680 collector-emitter saturation voltage * VCE(sat) IC = 500 mA; IB = 25 mA 0.2 V Transition frequency fT IC = 200 mA; VCE = 2 V; f = 100 MHz 400 MHz Collector output capacitance Cob VCB=10V, IE=0A, f=1MHz 12 pF Forward voltage VF IF=700mA 490 mV Reverse current IR VR=20V 200 μA * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. Transistor TR1 Di2 ■ Marking Marking L10 FML10 Transistors www.kexin.com.cn 2

www.kexin.com.cn 3 SMD Type Transistors Tr1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : I C (A) Fig.1 DC current gain vs. collector current DC CURRENT GAIN : h FE 100 1000 Ta=25°C Ta= −40°C Ta=100°C V CE =2V Pulsed 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : I C (A) Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current 0.001 BASE SATURATION VOLTAGE : V BE (sat) (V) COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) 0.1 0.01 Ta=25°C Ta=25°C Ta= −40°C Ta= −40°C Ta=100°C Ta=100°C V BE(sat) V CE(sat) I C B =20 Pulsed I C B =20/1 Pulsed 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : I C (A) Fig.3 Collector-emitter saturation voltage vs. collector current 0.001 COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) 0.01 0.1 Ta=25°C V CE =2V I C B =50/1 I C B =20/1 I C B =10/1 0.001 0.01 0.1 BASE TO EMITTER VOLTAGE : V BE (V) Fig.4 Grounded emitter propagation characteristics COLLECTOR CURRENT : I C (A) 1.51.0 0.5 V CE =2V Pulsed Ta=25°C Ta= −40°C Ta=100°C EMITTER CURRENT : I E (A) Fig.5 Gain bandwidth product vs. emitter current TRANSITION FREQUENCY : f T (MHz) 100 1000 V CE =2V Ta=25°C Pulsed 0.001 0.01 0.1 1 COLLECTOR CURRENT : I C (A) Fig.6 Switching time SWITCHING TIME : (ns) 100 1000 IC=20 IB1=-20IB2 Ta=25°C f=100MHz tstg tdon tr tf 0.1 1 10 100 EMITTER TO BASE VOLTAGE : V EB (V) COLLECTOR TO BASE VOLTAGE : V CB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 Cib Cob I E =0A f=1MHz Ta=25°C Di2 0.1m 10m 100m FORWARD CURRENT : I F (A) FORWARD VOLTAGE : V F (V) Fig.8 Forward characteristics Ta=125 Ta = − Ta =25 0.1µ 10µ 100µ 10m 100m 1000m REVERSE CURRENT : I R (A) REVERSE VOLTAGE : V R (V) 01 0 20 30 40 50 60 70 Fig.9 Reverse characteristics Ta=25°C Ta= −25°C Ta=125°C Di2 FML10 ■ Typical Characteristics