FMG61R THINKISEMI | Alldatasheet
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60.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.13T MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL UNIT VRRM 200 400 600 800 1000 1200 V VRMS 140 280 420 560 700 840 V VDC 200 400 600 800 1000 1200 V IF(AV) A IFSM A VF IR μA μA Trr nS CJ pF RθJC ℃/W TJ,TSTG ℃ Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Note:(3)Thermal Resistance junction to case. Typical Junction Capacitance (Note 2) 300 Typical Thermal Resistance (Note 3) 0.75 Operating Junction and Storage Temperature Range -55 to +175 Maximum Reverse Recovery Time (Note1) PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125℃ (Total Device 2x30.0A=60.0A) 60.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method)(Per Diode/Per Leg) 600 Maximum Instantaneous Forward Voltage @30.0A(Per Diode/Per Leg) Maximum DC Reverse Current @TJ=25℃ At Rated DC Blocking Voltage @TJ=125℃ 1.0 100 1.50-1.70 25-50 50-75 FMG61R Features TO-3P(TO-3PN/TO-3PB) Unit:inch(mm) ※ ThinkiSemi latest&matured p rocess FRD/FRED ※ Low forward volta g e dro p ※ Hi g h current ca p abilit y Low reverse leakage current Low reverse leakage current ※ Hi g h sur g e current ca p abilit y Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Am p lifiers and Sound Device S y stems ※ Platin g Power Su pp l y ,Motor Control,UPS and SMPS etc. Mechanical Data ※ Case: Heatsink o p p acka g e Epoxy: UL 94V 0r a t ef l a m er e t a r d a n t Epoxy: UL 94V 0 rate flame retardant ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As marked on diode bod y ※ Mountin g p osition: An y ※ Wei g ht: 6.5 g ram a pp roximatel y Positive Negative Common Cathode Case Case Common Anode Doubler Case Doubler Polarity Suffix "R" Suffix "U"Suffix "S" .600 (15.25 .580 (14.75 .776 (19.70 .819 (20.80 .130 (3.30 .145 (3.70 .798 (20.25 .777 (19.75 .087 (2.20 .070 (1.80 .126(3.20) .110(2.80) .225(5.70) .204(5.20) .225(5.70) .204(5.20) .199(5.05) .175(4.45) .030(0.75) .017(0.45) .604(15.35) .620(15.75) .050(1.25) .045(1.15) .142(3.60) .125(3.20) .095(2.40) en metal TO-3P(TO-3PN/TO-3PB) FMG62R FMG64R FMG63R FMG66R FMG65R FMG68R FMG67R FMG610R FMG69R FMG612R FMG610R Case Tandem Series Connection Suffix "T"
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.13T FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 300 0.1 0 125 CASE TEMPERATURE, INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 120 240 360 480 600 1 10 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 9000 1.0 4.0 10 100 300
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 T J =25 T J = 25 f = 1.0 MHZ Vsig = 50mVp-p FMG61R/FMG62R FMG63R/FMG64R FMG65R/FMG66R FMG67R/FMG68R/FMG69R/FMG610R/FMG611R/FMG612R 62.5 187.5 FMG61R thru FMG612R