FMF7N60

FMF7N60 FCI | Alldatasheet

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Features

■ RDS(on) (Max 1.2 Ω )@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. N-Channel MOSFET Symbol 2. Drain 3. Source 1. Gate TO-220F 1 2 3 FMF7N60 7A 600V N CHANNEL ISOLATED POWER MOSFET

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 600 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C - 0.6 - V/°C IDSS Drain-Source Leakage Current VDS = 600V, VGS = 0V -- 1 0 u A VDS = 480V, TC = 125 °C -- 1 0 0 u A IGSS Gate-Source Leakage, Forward VGS = 30V, VDS = 0V -- 1 0 0 n A Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resis- tance VGS =10 V, ID = 3.5A -1 . 0 1 . 2 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz - 1100 1500 pFCoss Output Capacitance - 110 150 Crss Reverse Transfer Capacitance - 12 16 Dynamic Characteristics td(on) Turn-on Delay Time VDD =300V, ID =7.0A, RG =25Ω (Note 4, 5) - 15 40 ns tr Rise Time - 30 70 td(off) Turn-off Delay Time - 110 230 tf Fall Time - 40 90 Qg Total Gate Charge VDS =480V, VGS =10V, ID =7.0A (Note 4, 5) - 28 37 nCQgs Gate-Source Charge - 5- Qgd Gate-Drain Charge(Miller Charge) - 11 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 7 . 0 AISM Pulsed Source Current - - 28 VSD Diode Forward Voltage I S =7.0A, VGS =0V - - 1.4 V trr Reverse Recovery Time IS=7.0A, VGS=0V, dIF/dt=100A/us -3 6 5 - n s Qrr Reverse Recovery Charge - 3.4 - uC ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 15.7mH, IAS =7A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 7A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. FMF7N60 7A 600V N CHANNEL ISOLATED POWER MOSFET

50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L IAS 2----2 BVDSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L ID t p EAS =L IAS 2----2 AS =L IAS 2----2 1----2 BV DSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL IDID t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FMF7N60 7A 600V N CHANNEL ISOLATED POWER MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Dr i v e r R G Sam e Ty pe as D U T V GS • dv/ dt cont r ol l ed by R G

• I SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( D U T ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G a te P u ls e W id th DUT V DS Dr i v e r R G Sam e Ty pe as D U T V GS • dv/ dt cont r ol l ed by R G
• I SD cont r ol l ed by pul se per i od V DD LL I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( D U T ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G a te P u ls e W id th FMF7N60 7A 600V N CHANNEL ISOLATED POWER MOSFET

(7.00) (0.70) MAX1.47 (30 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 0.50 +0.10 –0.05 TO-220F FMF7N60 7A 600V N CHANNEL ISOLATED POWER MOSFET