FMDS55N02 FCI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limit Unit VDS 25 VGS + 20 ID 55 IDM 350 TA = 25oC 70 TA = 75oC 42 TJ, Tstg -55 to 150 oC EAS 300 mJ Rθ JC 1.8 Junction-to-Ambient Thermal Resistance (PCB mounted) Rθ JA 40 Note: 1. Maximum DC current limited by the package 2. 1-in 2oz Cu PCB board oC/W Junction-to-Case Thermal Resistance Parameter V A W Drain-Source Voltage PD Pulsed Drain Current Avalanche Energy with Single Pulse ID=50A, VDD=25V, L=0.5mH Operating Junction and Storage Temperature Range Continuous Drain Current Gate-Source Voltage Maximum Power Dissipation TO-252 (D-PAK) VDS= 25V RDS(ON), Vgs@10V , Id@30A = 6mW RDS(ON), Vgs@4.5V, Id@30A = 9mW FMDS55N25 25V N-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 25 - - V Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 30A 7.5 9.0 Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 30A 4.5 6.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 1 1.6 3 V Zero Gate Voltage Drain Current IDSS VDS = 25V, VGS = 0V 1 uA Gate Body Leakage IGSS VGS = +20V, VDS = 0V + 100 nA Gate Resistance Rg Forward Transconductance gfs VDS = 15V, ID = 15A S Dynamic Total Gate Charge Qg 26 Gate-Source Charge Qgs 6 Gate-Drain Charge Qgd 5 Turn-On Delay Time td(on) 17 Turn-On Rise Time tr 3.5 Turn-Off Delay Time td(off) 40 Turn-Off Fall Time tf 6 Input Capacitance Ciss 2134 Output Capacitance Coss 343 Reverse Transfer Capacitance Crss 134 Source-Drain Diode Max. Diode Forward Current IS 20 A Diode Forward Voltage VSD IS = 20A, VGS = 0V 0.85 1.3 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% VDS = 15V, VGS = 0V f = 1.0 MHz pF mΩ VDD = 15V, RL = 15Ω ΙD = 1Α, VGEN = 10V RG = 6Ω ns VDS = 15V, ID = 25A VGS = 10V FMDS55N25 25V N-Channel Enhancement-Mode