FMC7G10US60 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • UL Certified No. E209204
  • Short circuit rated 10us @ T C = 100°C, VGE = 15V
  • High speed switching
  • Low saturation voltage : V CE(sat) = 2.2 V @ IC = 10A
  • High input impedance
  • Built in brake and 3 phase rectifier circuit
  • Fast & soft anti-parallel FWD

Applications

  • AC & DC motor controls
  • General purpose inverters
  • Robotics
  • Servo controls Internal Circuit Diagram R S T P N B GB GU EU -GU GV EV -GV U GW EW V -GW W E Package Code : 21PM-AA Absolute Maximum Ratings TC = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Symbol Description FMC7G10US60 Units Inverter Brake VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ T C = 25°C1 0 A ICM (1) Pulsed Collector Current 20 A IF Diode Continuous Forward Current @ T C = 100°C1 0 A IFM Diode Maximum Forward Current 20 A PD Maximum Power Dissipation @ T C = 25°C3 6 W TSC Short Circuit Withstand Time @ T C = 100°C1 0 u s Converter VRRM Repetitive Peak Reverse Voltage 1200 V IO Average Output Rectified Current 10 A IFSM Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 100 A I2t 1 Cycle Surge Current 41 A 2s Common TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C VISO Isolation Voltage @ AC 1minute 2500 V Mounting Torque Mounting part Screw @ M4 1.25 N.m

©2001 Fairchild Semiconductor Corporation FMC7G10US60 Rev. A4 FMC7G10US60 Electrical Characteristics of the IGBT @ Inverter & Brake TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage V GE = 0V, IC = 250uA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current V CE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current V GE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage I C = 10mA, VCE = VGE 5.0 6.0 8.5 V VCE(sat) Collector to Emitter Saturation Voltage I C = 10A, VGE = 15V -- 2.2 2.8 V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 660 -- pF Coes Output Capacitance -- 115 -- pF Cres Reverse Transfer Capacitance -- 25 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 10A, RG = 20Ω , VGE = 15V, Inductive Load, TC = 25°C -- 15 -- ns tr Rise Time -- 30 -- ns td(off) Turn-Off Delay Time -- 36 50 ns tf Fall Time -- 158 200 ns Eon Turn-On Switching Loss -- 0.14 -- mJ Eoff Turn-Off Switching Loss -- 0.22 -- mJ Ets Total Switching Loss -- 0.36 0.5 mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 10A, RG = 20Ω , VGE = 15V, Inductive Load, TC = 125°C -- 16 -- ns tr Rise Time -- 33 -- ns td(off) Turn-Off Delay Time -- 42 60 ns tf Fall Time -- 242 350 ns Eon Turn-On Switching Loss -- 0.16 -- mJ Eoff Turn-Off Switching Loss -- 0.45 -- mJ Ets Total Switching Loss -- 0.61 0.86 mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V Qg Total Gate Charge VCE = 300 V, IC = 10A, VGE = 15V -- 30 45 nC Qge Gate-Emitter Charge -- 5 10 nC Qgc Gate-Collector Charge -- 8 16 nC

©2001 Fairchild Semiconductor Corporation FMC7G10US60 Rev. A4 FMC7G10US60 Electrical Characteristics of the DIODE @ Inverter & Brake TC = 25°C unless otherwise noted Electrical Characteristics of the DIODE @ Converter TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage I F = 10A trr Diode Reverse Recovery Time IF = 10A di / dt = 20 A/us TC = 25°C -- 90 130 nsTC = 100°C -- 110 -- Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge TC = 25°C -- 32 70 nCTC = 100°C -- 55 -- Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage I F = 10A IRRM Repetitive Reverse Current V R = VRRM Symbol Parameter Typ. Max. Units Inverter RθJC Junction-to-Case (IGBT Part, per 1/6 Module) -- 3.47 °C/W RθJC Junction-to-Case (DIODE Part, per 1/6 Module) -- 4.0 °C/W Brake RθJC Junction-to-Case (IGBT Part) -- 3.47 °C/W RθJC Junction-to-Case (DIODE Part) -- 4.0 °C/W Converter R θJC Junction-to-Case (DIODE Part, per 1/6 Module) -- 3.6 °C/W Weight Weight of Module 60 -- g

©2001 Fairchild Semiconductor Corporation FMC7G10US60 Rev. A4 FMC7G10US60 Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE 02468 20V 12V 15V VGE = 10V Common Emitter TC = 25℃ Collector Current, I C [A] Collector - Emitter Voltage, V CE [V] 11 0 Common Emitter VGE = 15V TC = 25℃ ━━ Collector Current, I C [A] Collector - Emitter Voltage, V CE [V] 048 1 2 1 6 2 0 Common Emitter TC = 125℃ 20A 10A IC = 5A Collector - Emitter Voltage, V CE [V] Gate - Emitter Voltage, V GE [V] 0.1 1 10 100 1000 Duty cycle : 50% TC = 100℃ Power Dissipation = 18W VCC = 300V Load Current : peak of square wave Frequency [KHz] Load Current [A] -50 0 50 100 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20A 10A IC = 5A Common Emitter VGE = 15V Collector - Emitter Voltage, V CE [V] Case Temperature, T C [℃] 048 1 2 1 6 2 0 Common Emitter TC = 25℃ 20A 10A IC = 5A Collector - Emitter Voltage, V CE [V] Gate - Emitter Voltage, V GE [V]

©2001 Fairchild Semiconductor Corporation FMC7G10US60 Rev. A4 FMC7G10US60 Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Fig 11. Turn-On Characteristics vs. Collector Current Fig 12. Turn-Off Characteristics vs. Collector Current 11 0 200 400 600 800 1000 1200 1400 Cres Coes Cies Common Emitter VGE = 0V, f = 1MHz TC = 25℃ Capacitance [pF] Collector - Emitter Voltage, V CE [V] 10 100 100 Common Emitter VCC = 300V, V GE = ± 15V IC = 10A TC = 25 ℃ ━━ Tr Switching Time [ns] Gate Resistance, R G [Ω ] 10 100 100 1000 Eoff Eon Eoff Common Emitter VCC = 300V, V GE = ± 15V IC = 10A TC = 25 ℃ ━━ Switching Loss [uJ] Gate Resistance, R G [Ω ] 10 100 100 1000 Toff Tf Toff Tf Common Emitter VCC = 300V, V GE = ± 15V IC = 10A TC = 25 ℃ ━━ Switching Time [ns] Gate Resistance, R G [Ω ] 6 8 10 12 14 16 18 20

100 Ton

VGE = ± 15V, RG = 20Ω TC = 25 ℃ ━━ Switching Time [ns] Collector Current, I C [A] 6 8 10 12 14 16 18 20 100 1000 Tf Toff Toff Tf Common Emitter VGE = ± 15V, RG = 20Ω TC = 25 ℃ ━━ Switching Time [ns] Collector Current, I C [A]

©2001 Fairchild Semiconductor Corporation FMC7G10US60 Rev. A4 FMC7G10US60 0.01 0.1 IGBT : DIODE : Thermal Response, Zthjc [℃/W] Rectangular Pulse Duration [sec] Fig 14. Gate Charge CharacteristicsFig 13. Switching Loss vs. Collector Current Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Fig 17. RBSOA Characteristics Fig 18. Transient Thermal Impedance 01 0 2 0 3 0 VCC = 100 V 200 V 300 V Common Emitter RL = 30 Ω TC = 25℃ Gate - Emitter Voltage, V GE [ V ] Gate Charge, Q g [ nC ] 1 10 100 1000 Safe Operating Area VGE = 20V, T C = 100 ℃ Collector Current, I C [A] Collector-Emitter Voltage, V CE [V] 51 0 1 5 2 0 100 1000 Eon Eoff Common Emitter VGE = ± 15V, RG = 20Ω TC = 25 ℃ ━━ Switching Loss [uJ] Collector Current, I C [A] 0.1 1 10 100 1000 0.01 0.1 100 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature IC MAX. (Continuous) IC MAX. (Pulsed) DC Operation 100us 50us Collector Current, I C [A] Collector-Emitter Voltage, V CE [V] 0 100 200 300 400 500 600 700 0.1 Single Nonrepetitive Pulse T J ≤ 125℃ VGE = 15V RG = 20 Ω Collector Current, I C [A] Collector-Emitter Voltage, V CE [V]

©2001 Fairchild Semiconductor Corporation FMC7G10US60 Rev. A4 FMC7G10US60 Fig 20. Reverse Recovery CharacteristicsFig 19. Forward Characteristics 2 4 6 8 10 12 0.1 Common Cathode di/dt = 20A/ ㎲ TC = 25 ℃ TC = 100℃ Irr Trr Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [x10ns] Forward Current, I F [A] 01234 Common Cathode VGE = 0V TC = 25 ℃ TC = 125 ℃ Forward Current, I F [A] Forward Voltage, V F [V]

©2001 Fairchild Semiconductor Corporation FMC7G10US60 Rev. A4 FMC7G10US60 Package Dimension 21PM-AA (FS PKG CODE BJ) Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 STAR*POWER is used under license ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET VCX™