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Technical content

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 4,5 List Electrical Driver Transistor Formosa MSFMBTA55 / FMBTA56 Document ID Issued Date Revised Date Revision Page. DS-231164 2010/11/05 2011/07/21 B 9

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141

Features

Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228

  • Suffix "-H" indicates Halogen-free part, ex. FMBTA55-H. Mechanical data
  • Case :
  • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026
  • Mounting Position : Any
  • Weight : Approximated 0.008 gram Epoxy:UL94-V0 rated flame retardant Molded plastic, SOT-23 Driver PNP Transistor PARAMETER Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector Current - continuous Total device dissipation FR-5 board (1) Storage temperature Operating temperature SYMBOL VCBO VCEO VEBO IC PD TJ TSTG -55 ~ +150 -65 ~ +150 -4.0 UNIT Vdc Vdc Vdc mAdc mW o C o Maximum ratings (AT T =25 C unless otherwise noted)A Junction to ambient RθJA O C/W PD Thermal resistance O T = 25 CA O Derate above 25 C O mW/ C Total device dissipation alumina substrate(2) PD mW Junction to ambient RθJA O C/W PD Thermal resistance O T = 25 CA O Derate above 25 C O mW/ C -60 -60 -500 556 225 1.8 417 300 2.4 Thermal Characteristics CHARACTERISTIC SYMBOLCONDITIONS UNITMax FMBTA55 FMBTA56 -80 -80 Document ID Issued Date Revised Date Revision Page. Package outline FMBTA55 / FMBTA56 Driver Transistor SOT-23 Dimensions in inches and (millimeters) 0.035 (0.89) 0.051 (1.30) 0.063 (1.60) 0.047 (1.20) 0.108 (2.75) 0.083 (2.10) 0.027 (0.67) 0.013 (0.32) (A) (B) (C) 0.120 (3.04) 0.110 (2.80) .084(2.10) 0.034 (0.85) 0.020 (0.50) 0.003 (0.09) DS-231164 2010/11/05 2011/07/21 B 9

Collector-Base breakdown voltage FMBTA55 FMBTA56 CONDITIONS SYMBOL V(BR)CBO Min. -60 -80 UNIT Vdc Vdc Electrical o Characteristics (AT T =25 C unless otherwise noted)A Off Characteristics I = -100µAdc, I = 0 c E PARAMETER DC current gain CONDITIONS SYMBOL hFE 100 UNIT Vdc On Characteristics I = -10mAdc, V = -1.0Vdcc CE I = -100mAdc, V = -1.0Vdcc CE Collector-Emitter saturation voltage Base-Emitter saturation voltage I = -100mAdc, I = -10mAdcc B Vdc VCE(sat) VBE(on) Page 3 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Max. Collector Cutoff current FMBTA55 FMBTA56 V = -60Vdc, I = 0CB E V = -80Vdc, I = 0CB E -0.1 -4.0 ICBO µAdc Formosa MS Collector-Emitter voltage(3) breakdown FMBTA55 FMBTA56 I = -1.0mAdc, I = 0c B V CEO(BR) -60 -80 Emitter-Base voltagebreakdown V EBO(BR) I = -100µAdc, I = 0E C Vdc µAdc Min. Max. 100 Collector Cutoff Current V =-60Vdc, IB=0CE ICES -0.1 -0.1 -0.25 I = -100mAdc, V = -1.0Vdcc CE -1.2 Small Signal Characteristics PARAMETER Current Gain Bandwidth Product (4) CONDITIONS SYMBOL fT UNIT I = -100mA, V = -1.0Vdc,c CE f=100MHz Min. Max.

50 MHz

Document ID Issued Date Revised Date Revision Page. FMBTA55 / FMBTA56 Driver Transistor 3. Pulse test: pulse width <=300µs, duty cycle<=2.0% 4. fT is defined as the frequency at which |hfe| extrapolates to unity. DS-231164 2010/11/05 2011/07/21 B 9

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 FIG.3 Capacitance FIG.4 Switching Time FIG.5 DC Current Gain Document ID Issued Date Revised Date Revision Page. Rating and characteristic curves ( )FMBTA55/FMBTA56 TURN-ON TIME TURN-OFF TIME *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities FIG.1 Switching Time Test Circuits FIG.2 Current-Gain Bandwidth Product =-40V DS-231164 2010/11/05 2011/07/21 B 9

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. Rating and characteristic curves ( )FMBTA55/FMBTA56 FIG.6 "On" Voltage FIG.8 Base-Emitter Temperature Coefficient FIG.7 Collectpr Saturation Region RθVΒ RθVΒ DS-231164 2010/11/05 2011/07/21 B 9

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Pinning information PinB Base PinC Collector PinE Emitter Pin Simplified outline Symbol B C E E C B Marking Type number Marking code FMBTA55 2H FMBTA56 2GM Suggested solder pad layout SOT-23 0.035(0.90) 0.031(0.80) 0.079(2.0) 0.037(0.95) 0.037(0.95) Dimensions in inches and (millimeters) Document ID Issued Date Revised Date Revision Page. FMBTA55 / FMBTA56 Driver Transistor DS-231164 2010/11/05 2011/07/21 B 9

13" Reel outside diameter 7" Reel outside diameter 13" Reel inner diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Reel width Overall tape thickness Tape width E B C d F T W P A D D Symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 unit:mm 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 3.15 2.77 1.22 E B d F W PA D D1D2 C T Page 7 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MS Document ID Issued Date Revised Date Revision Page. FMBTA55 / FMBTA56 Driver Transistor DS-231164 2010/11/05 2011/07/21 B 9

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. Reel packing SOT-23 3,000 4.0 30,000 183*183*123 178 382*262*387 240,000 11.6 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) 1.Storage environment: Temperature=5 ~40 Humidity=55%±25% 2.Reflow soldering of surface-mount devices o o C C Suggested thermal profiles for soldering processes Profile Feature Soldering Condition Average ramp-up rate(TL to TP) <3 /sec Preheat o -Temperature Min(Tsmin) 150 C o -Temperature Max(Tsmax) 200 C -Time(min to max)(ts) 60~120sec Tsmax to TL o -Ramp-upRate <3 C/sec Time maintained above: o -Temperature(TL) 217 C -Time(tL) 60~260sec o o Peak Temperature(TP) 255 C-0/+5 C o Time within 5 C of actual Peak Temperature(tP) o Ramp-down Rate <6 C/sec o Time 25 C to Peak Temperature <6minutes o C 10~30sec 3.Reflow soldering Critical Zone TL to TP TL Tsmax Tsmin Ramp-up Tp tS Preheat o t25 C to Peak Time TL TP Ramp-down Temperature FMBTA55 / FMBTA56 Driver Transistor DS-231164 2010/11/05 2011/07/21 B 9

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MS Document ID Issued Date Revised Date Revision Page. FMBTA55 / FMBTA56 Driver Transistor DS-231164 2010/11/05 2011/07/21 B 9 High reliability test capabilities Steady State Operating Life High Temperature Reverse Bias Temperature Cycle Autoclave High Temperature Storage Life Solderability High Temperature High Humidity Reverse Bias Resistance to Soldering Heat TA=25°C P =225mW Test Duration:1000hrsD Tj=150℃,V =80% related volage, 1000hrsCE -55℃(15min) to 150℃(15min)Air to Air Transition Time<20sec Test Cycles:1000cycle P=2atm Ta=121℃ RH=100% Test Duration:96hrs Ta=150℃ Test Duration:1000hrs 245℃,Test Duration:5sec Ta=85℃, 85%RH, V =80% related volage,Test Duration:1000hrsCE 260℃,Test Duration:10sec Test Duration: Item Test Conditions