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Technical content

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 2,3 5, 6 List SMD PNP Transistor Formosa MSFMBT4403 Document ID Issued Date Revised Date Revision Page. DS-231118 2008/02/10 2010/03/10 B 10

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 600mA Silicon PNP Epitaxial Planar Transistor

Features

Capable of 225mW power dissipation. Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" dinicates Halogen-free part, ex.FMBT4403-H.

  • Epitaxial plana chip construction
  • Ideal for medium power application and switching PARAMETER Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Total device dissipation FR-5 board (1) Storage temperature range Operating junction temperature range CONDITIONS Symbol VCBO VCEO VEBO IC PD TJ TSTG MIN. -55 -55 TYP. MAX. -40 -40 -5.0 -600 +150 +150 UNIT V V V mA mW o C o Maximum ratings (AT T =25 C unless otherwise noted)A Junction to ambient RθJA 556 O C/W Mechanical data Epoxy:UL94-V0 rated flame retardant
  • Case : Molded plastic, SOT-23
  • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026
  • Mounting Position : Any
  • Weight : Approximated 0.008 gram PD Thermal resistance(1) 225 1.8 O T = 25 CA O Derate above 25 C Formosa MS O mW/ C Total device dissipation alumina substrate(2) PD mW Junction to ambient RθJA 417 O C/W PD Thermal resistance(2) 300 2.4 O T = 25 CA O Derate above 25 C O mW/ C FMBT4403 Document ID Issued Date Revised Date Revision Page. SOT-23 Dimensions in inches and (millimeters) 0.035 (0.89) 0.051 (1.30) 0.063 (1.60) 0.047 (1.20) 0.108 (2.75) 0.083 (2.10) 0.027 (0.67) 0.013 (0.32) (A) (B) (C) 0.120 (3.04) 0.110 (2.80) .084(2.10) 0.034 (0.85) 0.020 (0.50) 0.003 (0.09) DS-231118 2008/02/10 2010/03/10 B 10 SMD PNP Transistor o C

Collector-Base breakdown voltage Collector-Emitter voltage(3)breakdown Emitter-Base voltagebreakdown Base cutoff current CONDITIONS Symbol V(BR)CBO V CEO(BR) V EBO(BR) IBL ICEX MIN. TYP. MAX. -40 -40 -5.0 -0.1 UNIT V V V µA Formosa MS o Characteristics (AT T =25 C unless otherwise noted)A Off characteristics I = -0.1mA, I = 0c E I = -1.0mA, I = 0c B I = -0.1mA, I = 0E C Collector cutoff current V = -35Vdc, V = -0.4 VdcCE EB V = -35Vdc, V = -0.4VdcCE EB 3.Pulse test : pukse width < 300uS, duty cycle < 2.0%. PARAMETER DC current gain CONDITIONS Symbol hFE MIN. TYP. MAX. 100 100 UNIT Vdc On characteristics(3) I = -0.1mA, V = -1.0Vc CE I = -1.0mA, V = -1.0Vc CE I = -10mA, V = -1.0Vc CE I = -150mA, V = -1.0Vc CE I = -500mA, V = -2.0Vc CE Collector-Emitter saturation voltage(3) Base-Emitter saturation voltage(3) I = 150mA, I = 15mAc B I = 500mA, I = 50mAc B I = 150mA, I = 15mAc B I = 500mA, I = 50mAc B Vdc -0.4 -0.75 -0.95 -1.30 0.75 VCE(sat) VBE(sat) PARAMETER Input capacitance CONDITIONS Symbol Cibo MIN. TYP. MAX. 200 8.5 1.5 UNIT 0.1 Small-signal characteristics I = -20mA, V = -10V, f = 100MHzC CE Output admittance 500 100 hfe Current-gain-bandwidth product(4) Output capacitance Input impedance Voltage feeback radio Small-signal current gain V = -10V, I = 0, f = 1.0MHzCB E V = -0.5V, I = 0, f = 1.0MHzEB C V = -10V, I = -1.0mA, f = 1.0KHzCE C V = -10V, I = 1.0mA, f = 1.0KHzCE C V = -10V, I = -1.0mA, f = 1.0KHzCE C V = -10V, I = -1.0mA, f = 1.0KHzCE C fT Cobo hie hre hoe 8.0 1.0 X 10 µmhos VdcpF kohms MHz pF Page 3 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 PARAMETER Storage time CONDITIONS Symbol ts MIN. TYP. MAX. 225 UNIT Switching characteristics Delay time Rise time Fall time V = -30V, V = -2.0Vdc, I = -150mA, I = -15mACC BE C B1 td tr tf 30 V = -30V, I =-150mA, I = I = -15mACC C B1 B2 ns 4.f is defined as the frequency at which h extrapolates to unity.T fe -0.1 300 FMBT4403 Document ID Issued Date Revised Date Revision Page. DS-231118 2008/02/10 2010/03/10 B 10 SMD PNP Transistor

Document ID Issued Date Revised Date Revision Page. Figure 1. Turn-On Time Figure 2. Turn-Off T ime Figure 3. Capacitances Figure 4. Charge Data

25 C 125 C

Figure 5. Turn-On Time Figure 6. Rise Time

Suggested solder pad layout Page 7 SOT-23 Dimensions in inches and (millimeters) 0.035(0.90) 0.031(0.80) 0.079(2.0) 0.037(0.95) 0.037(0.95) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Pinning information PinB Base PinC Collector PinE Emitter Pin Simplified outline Symbol Marking Type number Marking code FMBT4403 2T B C E E C B Formosa MSFMBT4403 Document ID Issued Date Revised Date Revision Page. DS-231118 2008/02/10 2010/03/10 B 10 SMD PNP Transistor

13" Reel outside diameter 7" Reel outside diameter 13" Reel inner diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Reel width Overall tape thickness Tape width E B C d F T W P A D D Symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 unit:mm 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Page 8 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 3.15 2.77 1.22 E B d F W PA D D1D2 C T http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MSFMBT4403 Document ID Issued Date Revised Date Revision Page. DS-231118 2008/02/10 2010/03/10 B 10 SMD PNP Transistor

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MSFMBT4403 Document ID Issued Date Revised Date Revision Page. Reel packing SOT-23 3,000 4.0 30,000 183*183*123 178 382*262*387 240,000 11.6 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) Profile Feature Soldering Condition Average ramp-up rate(TL to TP) <3 /sec Preheat o -Temperature Min(Tsmin) 150 C o -Temperature Max(Tsmax) 200 C -Time(min to max)(ts) 60~120sec Tsmax to TL o -Ramp-upRate <3 C/sec Time maintained above: o -Temperature(TL) 217 C -Time(tL) 60~260sec o o Peak Temperature(TP) 255 C-0/+5 C o Time within 5 C of actual Peak Temperature(tP) o Ramp-down Rate <6 C/sec o Time 25 C to Peak Temperature <6minutes o C 3.Reflow soldering 10~30sec 1.Storage environment: Temperature=5 ~40 Humidity=55%±25% 2.Reflow soldering of surface-mount devices o o C C Suggested thermal profiles for soldering processes Critical Zone TL to TP TL Tsmax Tsmin Ramp-up Tp tS Preheat o t25 C to Peak Time TL TP Ramp-down Temperature DS-231118 2008/02/10 2010/03/10 B 10 SMD PNP Transistor

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MSFMBT4403 Document ID Issued Date Revised Date Revision Page. High reliability test capabilities Steady State Operating Life High Temperature Reverse Bias Temperature Cycle Autoclave High Temperature Storage Life Solderability High Temperature High Humidity Reverse Bias Resistance to Soldering Heat P =225mW Test Duration:1000hrsD Tj=150℃,V =80% related volage,1000hrsCE -55℃(15min) to 150℃(15min)Air to Air Transition Time<20sec Test Cycles:1000cycle P=2atm Ta=121℃ RH=100% Test Duration:96hrs Ta=150℃ Test Duration:1000hrs 245℃,5sec Ta=85℃, 85%RH, V =80% related volage,1000hrsCE 260℃,10sec Item Test Conditions DS-231118 2008/02/10 2010/03/10 B 10 SMD PNP Transistor