FMBT4402 FCI | Alldatasheet
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Data Sheet PNP Switching Transistor FMBT4402 Ratings Maximum Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current (Continuous) V CEO -40 Vdc VCBO -40 Vdc VEBO -5.0 Vdc IC -600 mAdc Symbol Value Units Thermal Characteristics Characteristic Total Device Dissipation FR-5 Board (Note1) TA = 25oC Derate above 25oC Thermal Resistance Total Device Dissipation Alumina Substrate, T A = 25oC (Note 2) Derate above 25oC Thermal Resistance Junction and Storage Temperature P D 225 mW 1.8 mW/ oC RθJA 556 oC/W PD 300 mW 2.4 mW/ oC RθJA 417 oC/W TJ, TSTG -55 to 150 oC Symbol Max Units Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in. (3) Pulse test: Pulse width < 300 µs, duty cycle < 2.0%. Mechanical Dimensions .083/.098 .047/.055 .035/.041 ..035/.044 .016 .110/.120 .0005/.0039 .015/.020 .035/.041 .003/.007
V CE(sat) Vdc --- -0.4 --- -0.75 V BE(sat) Vdc -0.75 -0.95 --- -1.2 DC Current Gain C = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -150 mAdc, VCE = -2.0 Vdc) (IC = -500 mAdc, VCE = -2.0 Vdc) Collector - Emitter Saturation Voltage (Note 3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) Base - Emitter Saturation Voltage (Note 3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) fT 150 --- MHz Ccb --- 8.5 pF Ceb --- 30 pF hie .75 7.5 k Ω hre 0.1 8.0 x10 -4 hfe 30 250 --- hoe 1.0 100 µmhos Switching Characteristic Small-Signal Characteristic On Characteristic Current - Gain - Bandwidth Product (IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Small - Signal Current Gain (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Delay Time (V CC = -30 Vdc, VBE = -2.0 Vdc, Rise Time I C = -150 mAdc, IB1 = -15 mAdc) Storage Time (V CC = -30 Vdc, IC = -150 mAdc, Fall Time I B1 = IB2 = -15 mAdc) td --- 15 ns tr --- 20 ts --- 225 ns tf --- 30 Electrical Characteristics @ 25oC Off Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage (Note 3) (IC = -1.0mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -0.1mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -0.1mAdc, IC = 0) Base Cutoff Current (VCE = -35Vdc, VEB = -0.4Vdc) Collector Cutoff Current (VCE = -35Vdc, VEB = -0.4Vdc) VBR(CEO) -40 --- Vdc VBR(CBO) -40 --- Vdc VBR(EBO) -5.0 --- Vdc IBL --- -0.1 µAdc ICEX --- -0.1 µAdc