FMBT4401 FCI | Alldatasheet

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Technical content

VEBO 6.0 V IC 600 mA Total Device Dissipation FR-5 Board (Note1) TA = 25oC Junction and Storage Temperature

Description

Data Sheet NPN Switching Transistor FMBT4401 Ratings Maximum Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current (Continuous) Symbol Value Units P D 350 mW TJ, TSTG -55 to 150 oC Mechanical Dimensions .110 .060 .037 .037 .115 .016 .043 .004 .016 Electrical Characteristics @ 25oC Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage (IC = 1.0mA) Collector - Base Breakdown Voltage (IC = 0.1mA) Emitter - Base Breakdown Voltage (IE = 0.01mA) Collector Cutoff Current (VCE = 35V, VEB = -0.4V) DC Current Gain (IC = 0.1 mA, VCE = 1.0 V) (IC = 1.0 mA, VCE = 1.0 V) (IC = 10 mA, VCE = 1.0 V) (IC = 150 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 2.0 V) Collector - Emitter Saturation Voltage (Note 3) (IC = 150 mA, IB = 15 mA) (IC = 500 mA, IB = 50 mA) Base - Emitter Saturation Voltage (Note 3) (IC = 150 mA, IB = 15 mA) (IC = 500 mA, IB = 50 mA) Current - Gain - Bandwidth Product (IC = 20 mA, VCE = 10 V, f = 100 MHz) Collector-Base Capacitance (VCB = 5 V, IE = 0, f = 1.0 MHz) VBR(CEO) 40 --- V VBR(CBO) 60 --- V VBR(EBO) 6.0 --- V ICEX --- 0.1 µA HFE --- 20 --- 40 --- 80 --- 100 300 40 --- V CE(sat) Vdc --- 0.4 --- 0.75 V BE(sat) Vdc --- 0.95 --- 1.2 f T 250 --- MHz Ccb --- 6.5 pF