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Technical content

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 2,3 4, 5, 6 List Dual PNP Epitaxial Planar Transistor Formosa MSFMBT3906DW1 Document ID Issued Date Revised Date Revision Page. DS-231113 2008/02/10 2010/03/10 B 10

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 200mA Silicon PNP Epitaxial Planar Transistor

Features

collector-emitterbreakdien voltage. (BV = -40V@I =-1.0mA) CEO C Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current.

  • Offer PNP+ PNP in one package recommended Capable of 150mW power dissipation. Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex.FMBT3906DW1-H
  • High PARAMETER Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Total device dissipation FR-5 board (1) Storage temperature Operating temperature CONDITIONS Symbol VCBO VCEO VEBO IC PD TJ TSTG MIN. -55 -65 TYP. MAX. -40 -40 -5.0 -200 +150 +150 UNIT V V V mA mW o C o Maximum ratings (AT T =25 C unless otherwise noted)A Junction to ambient O C/W Thermal resistance 150 833 O T = 25 CA Formosa MS RθJA FMBT3906DW1 Document ID Issued Date Revised Date Revision Page. Mechanical data
  • Case :
  • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity : See Diagram
  • Mounting Position : Any
  • Weight : Approximated 0.006 gram Epoxy:UL94-V0 rated flame retardant Molded plastic, SOT-363 3 2 1 Q Q Dual PNP Epitaxial Planar Transistor DS-231113 2008/02/10 2010/03/10 B 10 SOT-363 .087(2.20) .079(2.00) .018(0.46) .010(0.26) .087(2.20) .079(2.00) .053(1.35) .045(1.15) .010(0.25) .003(0.08) .026(0.65)Typ. .014(0.35) .006(0.15) .004(0.10) Max. .043(1.10) .035(0.90) .016(0.40) .012(0.30) Dimensions in inches and (millimeters)

Collector-Base breakdown voltage Collector-Emitter voltage(3)breakdown Emitter-Base voltagebreakdown Base cutoff current CONDITIONS Symbol V(BR)CBO V CEO(BR) V EBO(BR) IBL ICEX MIN. TYP. MAX. -40 -40 -5.0 -50 UNIT V V V nA -50 Formosa MS o Characteristics (AT T =25 C unless otherwise noted)A Off characteristics I = -10uA, I = 0c E I = -1mA, I = 0c B I = -10uA, I = 0c C Collector cutoff current V = -30Vdc, V = -3.0VdcCE EB V = -30Vdc, V = -3.0VdcCE EB 3.Pulse test : pukse width < 300uS, duty cycle < 2.0%. PARAMETER DC current gain CONDITIONS Symbol hFE MIN. TYP. MAX. 100 UNIT Vdc On characteristics(3) I = -0.1mA, V = -1.0Vc CE I = -1.0mA, V = -1.0Vc CE I = -10mA, V = -1.0Vc CE I = -50mA, V = -1.0Vc CE I = -100mA, V = -1.0Vc CE Collector-Emitter saturation voltage(3) Base-Emitter saturation voltage(3) I = -10mA, I = -1.0mAc B I = -50mA, I = -5.0mAc B I = -10mA, I = -1.0mAc B I = -50mA, I = -5.0mAc B Vdc -0.25 -0.40 -0.85 -0.95 -0.65 VCE(sat) VBE(sat) PARAMETER Input capacitance CONDITIONS Symbol Cibo MIN. TYP. MAX. 250 4.5 1.0 2.0 UNIT 0.1 Small-signal characteristics I = -10mA, V = -20V, f = 100MHzC CE Output admittance V = -5.0V, I = -100uA, RS = 1.0K ohms, f = 1.0KHZCE C dB 400 4.0 hfe NF Current-gain-bandwidth product(4) Output capacitance Input impedance Voltage feeback radio Small-signal current gain Noise figure V = -5.0V, I = 0, f = 1.0MHzCB E V = -0.5V, I = 0, f = 1.0MHzEB C V = -10A, I = -1.0mA, f = 1.0KHzCE C V = -10V, I = -1.0mA, f = 1.0KHzCE C V = -10V, I = -1.0mA, f = 1.0KHzCE C V = -10V, I = -1.0mA, f = 1.0KHzCE C fT Cobo hie hre hoe 10.0 100 3.0 X 10 umhos Vdc Vdc pF kohms MHz pF Page 3 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 PARAMETER Storage time CONDITIONS Symbol ts MIN. TYP. MAX. 225 UNIT Switching characteristics Delay time Rise time Fall time V = -3.0V, V = 0.5V, I = -10mA, I = -1.0mACC BE C B1 td tr tf 75 V = -3.0V, I =-10mA, I = I = -1.0mACC C B1 B2 ns 4.f is defined as the frequency at which h extrapolates to unity.T fe 300 5. Pulse Test: Pulse Width <=300µs, Duty cycle«=2.0% FMBT3906DW1 Document ID Issued Date Revised Date Revision Page. Dual PNP Epitaxial Planar Transistor DS-231113 2008/02/10 2010/03/10 B 10

Suggested solder pad layout Page 7 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Pinning information Pin Simplified outline Symbol Marking Type number Marking code FMBT3906DW1 A2 Formosa MSFMBT3906DW1 Document ID Issued Date Revised Date Revision Page. 3 2 1 Q Q Dimensions in inches and (millimeters) SOT-363 0.024(0.60) 0.0165(0.42) 0.075(1.9) 0.025(0.65) 0.025(0.65) FMBT3906DW1 Dual PNP Epitaxial Planar Transistor 3 2 1 4 5 6 DS-231113 2008/02/10 2010/03/10 B 10

E B d F W PA D D1D2 C T http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MSFMBT3906DW1 Document ID Issued Date Revised Date Revision Page. Item Tolerance SOT-363 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 7" Reel outside diameter 13" Reel inner diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Reel width Overall tape thickness Tape width E B C d F T W P A D D Symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 unit:mm 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 2.36 2.40 1.20 Dual PNP Epitaxial Planar Transistor DS-231113 2008/02/10 2010/03/10 B 10

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MSFMBT3906DW1 Document ID Issued Date Revised Date Revision Page. Dual PNP Epitaxial Planar Transistor Reel packing SOT-363 3000 4.0 30,000 183*183*123 178 382*262*387 240,000 9.5 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) 1.Storage environment: Temperature=5 ~40 Humidity=55%±25% 2.Reflow soldering of surface-mount devices o o C C Suggested thermal profiles for soldering processes Profile Feature Soldering Condition Average ramp-up rate(TL to TP) <3 /sec Preheat o -Temperature Min(Tsmin) 150 C o -Temperature Max(Tsmax) 200 C -Time(min to max)(ts) 60~120sec Tsmax to TL o -Ramp-upRate <3 C/sec Time maintained above: o -Temperature(TL) 217 C -Time(tL) 60~260sec o o Peak Temperature(TP) 255 C-0/+5 C o Time within 5 C of actual Peak Temperature(tP) o Ramp-down Rate <6 C/sec o Time 25 C to Peak Temperature <6minutes o C 10~30sec 3.Reflow soldering Critical Zone TL to TP TL Tsmax Tsmin Ramp-up Tp tS Preheat o t25 C to Peak Time TL TP Ramp-down Temperature DS-231113 2008/02/10 2010/03/10 B 10

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MSFMBT3906DW1 Document ID Issued Date Revised Date Revision Page. Dual PNP Epitaxial Planar Transistor High reliability test capabilities Steady State Operating Life High Temperature Reverse Bias Temperature Cycle Autoclave High Temperature Storage Life Solderability High Temperature High Humidity Reverse Bias Resistance to Soldering Heat TA=25°C P =150mW Test Duration:1000hrsD Tj=150℃,V =80% related volage, 1000hrsCE -55℃(15min) to 150℃(15min)Air to Air Transition Time<20sec Test Cycles:1000cycle P=2atm Ta=121℃ RH=100% Test Duration:96hrs Ta=150℃ Test Duration:1000hrs 245℃,Test Duration:5sec Ta=85℃, 85%RH, V =80% related volage,Test Duration:1000hrsCE 260℃,Test Duration:10sec Test Duration: Item Test Conditions DS-231113 2008/02/10 2010/03/10 B 10