FMBT3906 FCI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Description
Data Sheet PNP General Purpose Transistor FMBT3906 Ratings Maximum Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current (Continuous) V CEO -40 Vdc VCBO -40 Vdc VEBO -5.0 Vdc IC -200 mAdc Symbol Value Units Thermal Characteristics Characteristic Total Device Dissipation FR-5 Board (Note1) TA = 25oC Derate above 25oC Thermal Resistance Total Device Dissipation Alumina Substrate, T A = 25oC (Note 2) Derate above 25oC Thermal Resistance Junction and Storage Temperature P D 225 mW 1.8 mW/ oC RθJA 556 oC/W PD 300 mW 2.4 mW/ oC RθJA 417 oC/W TJ, TSTG -55 to 150 oC Symbol Max Units Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in. (3) Pulse test: Pulse width < 300 µs, duty cycle < 2.0%. Mechanical Dimensions .110 .060 .037 .037 .115 .016 .043 .004 .016
Data Sheet FMBT3906 PNP General Purpose Transistor Symbol Min Max Unit HFE --- 60 --- 80 --- 100 300 60 --- 30 --- V CE(sat) Vdc --- 0.25 --- 0.4 V BE(sat) Vdc 0.65 0.85 --- 0.95 DC Current Gain C = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector - Emitter Saturation Voltage (Note 3) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base - Emitter Saturation Voltage (Note 3) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) fT 250 --- MHz Cobo --- 4.5 pF Cibo --- 10 pF hie 2.0 12 k Ω hre 0.1 10 x10 -4 hfe 100 400 --- hoe 3.0 60 µmhos NF --- 4.0 dB Switching Characteristic Small-Signal Characteristic On Characteristic Current - Gain - Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Small - Signal Current Gain (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = -5.0 Vdc, IC = -100 µAdc, RS = 1.0 kΩ , f = 1.0 kHz) Delay Time (V CC = -3.0 Vdc, VBE = 0.5 Vdc, Rise Time I C = -10 mAdc, IB1 = -1.0 mAdc) Storage Time (V CC = -3.0 Vdc, IC = -10 mAdc, Fall Time I B1 = IB2 = -1.0 mAdc) td --- 35 ns tr --- 35 ts --- 225 ns tf --- 75 Electrical Characteristics @ 25oC Off Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage (Note 3) (IC = 1.0mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -10µAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -10µAdc, IC = 0) Base Cutoff Current (VCE = -30Vdc, VEB = -3.0Vdc) Collector Cutoff Current (VCE = -30Vdc, VEB = -3.0Vdc) VBR(CEO) -40 --- Vdc VBR(CBO) -40 --- Vdc VBR(EBO) -5.0 --- Vdc IBL --- -50 nAdc ICEX --- -50 nAdc