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Technical content

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 2,3 5, 6, 7 List Dual NPN Transistor Formosa MSFMBT3904DW1 & FMBT3904DW2 Document ID Issued Date Revised Date Revision Page. DS-231123 2008/02/10 2010/03/10 B 11

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Dual General Purpose Transistor NPN+NPN Silicon collector-emitterbreakdien voltage. (BV = 40V@I =1mA) S Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228

Features

mall load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Capable of 150mW power dissipation. Suffix "-H" indicates Halogen-free part, ex.FMBT3904DW1-H.

  • Offer NPN+NPN in one package High PARAMETER Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Total device dissipation Storage temperature Operating temperature CONDITIONS Symbol VCBO VCEO VEBO IC PD TJ TSTG MIN. -55 -65 TYP. MAX. 6.0 200 +150 +150 UNIT V V V mA o C Maximum ratings (AT T =25 C unless otherwise noted)A o 150T= 2 5 CA O Formosa MS Junction to ambient RθJA 833 O C/WThermal resistance mW FMBT3904DW1 & FMBT3904DW2 3 2 1 Q Q 3 2 1 Q Q FMBT3904DW1 FMBT3904DW2 Mechanical data Epoxy:UL94-V0 rated flame retardant Case : Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : See Diagram Mounting Position : Any Molded plastic, SOT-363 Weight : Approximated 0.006 gram Document ID Issued Date Revised Date Revision Page. DS-231123 2008/02/10 2010/03/10 B 11 SOT-363 .087(2.20) .079(2.00) .018(0.46) .010(0.26) .053(1.35) .045(1.15) .010(0.25) .003(0.08) .026(0.65)Typ. .014(0.35) Max. .043(1.10) .035(0.90) .016(0.40) .012(0.30) Dimensions in inches and (millimeters) Dual NPN Transistor

Collector-Base breakdown voltage Collector-Emitter voltage(3)breakdown Emitter-Base voltagebreakdown Base cutoff current CONDITIONS Symbol V(BR)CBO V CEO(BR) V EBO(BR) IBL ICEX MIN. TYP. MAX. 6.0 UNIT V V V nA Formosa MS Characteristics (AT T =25 C unless otherwise noted)A o Off characteristics I = 10uA, I = 0cE I = 1mA, I = 0cB I = 10uA, I = 0cC Collector cutoff current V = 30Vdc, V = 3.0VdcCE EB V = 30Vdc, V = 3.0VdcCE EB 3.Pulse test : pukse width < 300uS, duty cycle < 2.0%. PARAMETER DC current gain CONDITIONS Symbol hFE MIN. TYP. MAX. 100 UNIT Vdc On characteristics (3) I = 0.1mA, V = 1.0VcC E I = 1.0mA, V = 1.0VcC E I = 10mA, V = 1.0VcC E I = 50mA, V = 1.0VcC E I = 100mA, V = 1.0VcC E Collector-Emitter saturation voltage(3) Base-Emitter saturation voltage(3) I = 10mA, I = 1.0mAcB I = 50mA, I = 5.0mAcB I = 10mA, I = 1.0mAcB I = 50mA, I = 5.0mAcB Vdc 0.2 0.3 0.85 0.95 0.65 VCE(sat) VBE(sat) PARAMETER Input capacitance CONDITIONS Symbol Cibo MIN. TYP. MAX. 300 4.0 8.0 1.0 UNIT 0.5 Small-signal characteristics I = 10mA, V = 20V, f = 1.0MHzCC E Output admittance V = 5.0V, I = 100uA, RS = 1.0K ohms, f = 1.0KHZCE C dB 400 5.0 hfe NF Current-gain-bandwidth product(4) Output capacitance Input impedance Voltage feeback radio Small-signal current gain Noise figure V = 5.0V, I = 0, f = 1.0MHz CB E V = 0.5V, I = 0, f = 1.0MHzEB C V = 10mA, I = 1.0mA, f = 1.0KHzCE C V = 10V, I = 1.0mA, f = 1.0KHzCE C V = 10V, I = 1.0mA, f = 1.0KHzCE C V = 10V, I = 1.0mA, f = 1.0KHzCE C fT Cobo hie hre hoe 8.0 100 1.0 X 10 umhos pF kohms MHz pF Page 3 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 PARAMETER Storage time CONDITIONS Symbol ts MIN. TYP. MAX. 200 UNIT Switching characteristics Delay time Rise time Fall time V = 3.0V, V = -0.5V, I = 10mA, I = 1.0mACC BE C B1 td tr tf 50 V = 3.0V, I =10mA, I = I = 1.0mACC C B1 B2 ns 4.f is defined as the frequency at which h extrapolates to unity.T fe FMBT3904DW1 & FMBT3904DW2 Document ID Issued Date Revised Date Revision Page. 300 DS-231123 2008/02/10 2010/03/10 B 11 Dual NPN Transistor

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Pinning information Pin Simplified outline Symbol Marking Type number Marking code FMBT3904DW1 MA Formosa MSFMBT3904DW1 & FMBT3904DW2 FMBT3904DW2 MJ Suggested solder pad layout Dimensions in inches and (millimeters) SOT-363 0.024(0.60) 0.0165(0.42) 0.075(1.9) 0.025(0.65) 0.025(0.65) FMBT3904DW1 FMBT3904DW2 3 2 1 Q Q 3 2 1 Q Q Document ID Issued Date Revised Date Revision Page. 3 2 1 4 5 6 3 2 1 4 5 6 DS-231123 2008/02/10 2010/03/10 B 11 Dual NPN Transistor

E B d F W PA D D1D2 C T http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MSFMBT3904DW1 & FMBT3904DW2 Item Tolerance SOT-363 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 7" Reel outside diameter 13" Reel inner diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Reel width Overall tape thickness Tape width P E B C d F T W P A D D D Symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 unit:mm 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 2.36 2.40 1.20 Document ID Issued Date Revised Date Revision Page. DS-231123 2008/02/10 2010/03/10 B 11 Dual NPN Transistor

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MSFMBT3904DW1 & FMBT3904DW2 Document ID Issued Date Revised Date Revision Page. Reel packing SOT-363 3000 4.0 30,000 183*183*123 178 382*262*387 240,000 9.5 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) 1.Storage environment: Temperature=5 ~40 Humidity=55% 25% 2.Reflow soldering of surface-mount devices oo CC Suggested thermal profiles for soldering processes Profile Feature Soldering Condition Average ramp-up rate(T to T ) <3 /sec Preheat -Temperature Min(Tsmin) 150 -Temperature Max(Tsmax) 200 -Time(min to max)(t ) 60~120sec Tsmax to T -Ramp-upRate <3 /sec Time maintained above: -Temperature(T ) 217 -Time(t ) 60~260sec Peak Temperature(T ) 255 0/ 5 Time within 5 of actual Peak Temperature(t ) Ramp-down Rate <6 /sec Time 25 to Peak Temperature <6minutes LP s L L L P P o o o o o oo o o o C C C C C C- + C C C C 10~30sec 3.Reflow soldering Critical Zone TL to TP Critical Zone TL to TP TL Tsmax Tsmin Ramp-up Tp tS Preheat t25 C to Peak o Time TL TP Ramp-down Temperature DS-231123 2008/02/10 2010/03/10 B 11 Dual NPN Transistor

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MSFMBT3904DW1 & FMBT3904DW2 Document ID Issued Date Revised Date Revision Page. High reliability test capabilities Steady State Operating Life High Temperature Reverse Bias Temperature Cycle Autoclave High Temperature Storage Life Solderability High Temperature High Humidity Resistance to Soldering Heat Reverse Bias TA=25°C P =150mW Test Duration:1000hrs Tj 150 V 80 related volage 1000hrs 55 15min to 150 15min Air to Air Transition Time 20sec Test Cycles 1000cycle P 2atm Ta 121 RH 100 Test Duration 96hrs

150 Test Duration 1000hrs

Ta 85 85 RH V 80 related volage 1000hrs 260 10sec D CE CE =, = % , -( ) ( ) < : == = % : =, % , = % , Test Duration: Ta Test Duration Test Duration Test Duration Item Test Conditions DS-231123 2008/02/10 2010/03/10 B 11 Dual NPN Transistor