FMBT3904 FCI | Alldatasheet
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SOT-23 Dimensions in inches
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Data Sheet NPN General Purpose Transistor FMBT3904 Ratings Maximum Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current (Continuous) VCEO 40 Vdc VCBO 60 Vdc VEBO 6.0 Vdc IC 200 mAdc Symbol Value Units Thermal Characteristics Characteristic Total Device Dissipation FR-5 Board (Note1) TA = 25oC Derate above 25oC Thermal Resistance Total Device Dissipation Alumina Substrate, TA = 25oC (Note 2) Derate above 25oC Thermal Resistance Junction and Storage Temperature PD 225 mW 1.8 mW/oC RθJA 556 oC/W PD 300 mW 2.4 mW/oC RθJA 417 oC/W TJ, TSTG -55 to 150 oC Symbol Max Units Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in. (3) Pulse test: Pulse width < 300 µs, duty cycle < 2.0%. Mechanical Dimensions .110 .060 .037 .037 .115 .016 .043 .004 .016
Data Sheet FMBT3904 NPN General Purpose Transistor Symbol Min Max Unit HFE --- 40 --- 70 --- 100 300 60 --- 30 --- VCE(sat) Vdc --- 0.2 --- 0.3 VBE(sat) Vdc 0.65 0.85 --- 0.95 DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector - Emitter Saturation Voltage (Note 3) C = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base - Emitter Saturation Voltage (Note 3) C = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) fT 300 --- MHz Cobo --- 4.0 pF Cibo --- 8.0 pF hie 1.0 10 kΩ hre 0.5 8.0 x10-4 hfe 100 400 --- hoe 1.0 40 µmhos NF --- 5.0 dB Switching Characteristic Small-Signal Characteristic On Characteristic Current - Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance CB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance EB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance CE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio CE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small - Signal Current Gain CE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance CE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure CE = 5.0 Vdc, IC = 100 µAdc, RS = 1.0 kΩ , f = 1.0 kHz) Delay Time (V CC = 3.0 Vdc, VBE = 0.5 Vdc, Rise Time IC = -10 mAdc, IB1 = 1.0 mAdc) Storage Time (V CC = 3.0 Vdc, IC = 10 mAdc, Fall Time IB1 = IB2 = 1.0 mAdc) td --- 35 ns tr --- 35 ts --- 200 ns tf --- 50 Electrical Characteristics @ 25oC Off Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage (Note 3) C = 1.0mAdc, IB = 0) Collector - Base Breakdown Voltage C = 10µAdc, IE = 0) Emitter - Base Breakdown Voltage E = 10µAdc, IC = 0) Base Cutoff Current CE = 30Vdc, VEB = 3.0Vdc) Collector Cutoff Current CE = 30Vdc, VEB = 3.0Vdc) VBR(CEO) 40 --- Vdc VBR(CBO) 60 --- Vdc VBR(EBO) 6.0 --- Vdc IBL --- 50 nAdc ICEX --- 50 nAdc