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Technical content
http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 SMD NPN Transistor Formosa MSFMBT2222 / FMBT2222A Document ID Issued Date Revised Date Revision Page. DS-231107 2008/02/10 2011/07/21 D 9 3~4 5~6 List
http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 collector-emitterbreakdien voltage. (BV = 40V@I =10mA) S Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228
Features
mall load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Capable of 225mW power dissipation. High Suffix "-H" indicates Halogen-free part, ex.FMBT2222-H. PARAMETER Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Total device dissipation FR-5 board (1) Storage temperature range Operating junction temperature range CONDITIONS Symbol VCBO VCEO VEBO IC PD TJ TSTG FMBT2222 -55 ~ +150 -55 ~ +150 6.0 UNIT V V V mA mW o C Maximum ratings (AT T =25 C unless otherwise noted)A o Junction to ambient RθJA O C/W Mechanical data Epoxy:UL94-V0 rated flame retardant Case : Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Mounting Position : Any Molded plastic, SOT-23 Weight : Approximated 0.008 gram Thermal resistance(1) T= 2 5 CA O Derate above 25 C O Formosa MS mW/ C O Total device dissipation alumina substrate(2) PD mW Junction to ambient RθJA O C/WThermal resistance(2) T= 2 5 CA O Derate above 25 C O mW/ C O FMBT2222A 5.0 600 556 225 1.8 417 300 2.4 FMBT2222 / FMBT2222A Document ID Issued Date Revised Date Revision Page. SOT-23 Dimensions in inches and (millimeters) 0.035 (0.89) 0.051 (1.30) 0.063 (1.60) 0.047 (1.20) 0.108 (2.75) 0.083 (2.10) 0.027 (0.67) 0.013 (0.32) (A) (B) (C) DS-231107 2008/02/10 2011/07/21 D 9 General Purpose Transistor NPN Silicon SMD NPN Transistor o C
http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 FMBT2222 / FMBT2222A Document ID Issued Date Revised Date Revision Page. FMBT2222 FMBT2222A FMBT2222 FMBT2222A FMBT2222 FMBT2222A FMBT2222A FMBT2222A FMBT2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) ON CHARACTERISTICS FMBT2222 FMBT2222A FMBT2222 FMBT2222A FMBT2222 FMBT2222A FMBT2222 FMBT2222A FMBT2222 FMBT2222A FMBT2222A ONLY DS-231107 2008/02/10 2011/07/21 D 9 FMBT2222 FMBT2222A FMBT2222 FMBT2222A SMD NPN Transistor
Formosa MSFMBT2222 / FMBT2222A Page 4 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) SMALL–SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS(FMBT2222A only) FMBT2222 FMBT2222A FMBT2222 FMBT2222A FMBT2222 FMBT2222A FMBT2222A FMBT2222A FMBT2222A FMBT2222A FMBT2222A FMBT2222A FMBT2222A FMBT2222A FMBT2222A FMBT2222A DS-231107 2008/02/10 2011/07/21 D 9 3.Pulse Test:Pulse Width 300 s, Duty Cycle 2.0%. 4.f is defined as the frequency at which Ihfe extrapolates to unity. μ T SMD NPN Transistor μ κΩ
http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MS Document ID Issued Date Revised Date Revision Page. Rating and characteristic curves (FMBT2222 / FMBT2222A) DS-231107 2008/02/10 2011/07/21 D 9 125 C 25 C -40 C VCE 5V= 01. 03. 1 3 10 30 100 300 500 400 300 200 100 Typical Pulsed Current Gain vs Collector Current Ic-( )COLLECTOR CURRENT mA hFE -TYPICAL PULSED CURRENT GAIN b1 0= -40 C 25 C 125 C 1 10 100 500 04. 03. 02. 01. Collector Emitter Saturation- Voltage vs Collector Current Ic-( )COLLECTOR CURRENT mAV CESAT COLLECTOR-EMITTER VOLTAGE (V) b1 0= -40 C 25 C 125 C 1 10 100 500 08. 06. 04. Base Emitter Saturation- Voltage vs Collector Current Ic-( )COLLECTOR CURRENT mA V BESAT BASE-EMITTER VOLTAGE (V) VCE 5V= -40 C 25 C 125 C 01. 11 0 2 5 08. 06. 04. 02. Base Emitter ON Voltage vs- Collector Current Ic-( )COLLECTOR CURRENT mAV BE ON ( ) BASE-EMITTER ON VOLTAGE (V) VCB=40V C0llector Cutoff Current vs- Ambient Temperature TA-( )AMBIENT TEMPERATURE C ICBO COLLECT OR CURRENT (nA) 25 50 100 125 150 75 500 100 01. f 1MHz= Cib Cob Emitter Transition and Output Capacitance vs Reverse Bias Voltage REVERSE BIAS VOLTAGE V() CAPACITANCE pF 01. 1 10 100 SMD NPN Transistor
http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MS Document ID Issued Date Revised Date Revision Page. Rating and characteristic curves (FMBT2222 / FMBT2222A) DS-231107 2008/02/10 2011/07/21 D 9 IB1=IB2= 1c Vcc=25V tON tOFF 10 100 1000 400 320 240 160 Turn On and Turn Off Times vs Collector Current Ic-( )COLLECTOR CURRENT mA TIME nS IB1=IB2= 1c ts tr tf td Vcc 25V= 10 100 1000 400 320 240 160 Switching Times vs Collector Current Ic-( )COLLECTOR CURRENT mA TIME nS SOT 23- 0 25 50 75 100 125 150 07 5. 05. 02 5. Power Dissipation vs Ambient Temperature TEMPERATURE C() PD-( )POWER DISSIP ATION W SMD NPN Transistor
Suggested solder pad layout Page 7 SOT-23 Dimensions in inches and (millimeters) 0.035(0.90) 0.031(0.80) 0.079(2.0) 0.037(0.95) 0.037(0.95) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Pinning information PinB Base PinC Collector PinE Emitter Pin Simplified outline Symbol Marking Type number Marking code FMBT2222 M1B FMBT2222A 1P B C E E C B Formosa MSFMBT2222 / FMBT2222A Document ID Issued Date Revised Date Revision Page. DS-231107 2008/02/10 2011/07/21 D 9 SMD NPN Transistor
13" Reel outside diameter 7" Reel outside diameter 13" Reel inner diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Reel width Overall tape thickness Tape width P E B C d F T W P A D D D Symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 unit:mm 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Page 8 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 3.15 2.77 1.22 E B d F W PA D D1D2 C T http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MSFMBT2222 / FMBT2222A Document ID Issued Date Revised Date Revision Page. DS-231107 2008/02/10 2011/07/21 D 9 SMD NPN Transistor
http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MSFMBT2222 / FMBT2222A Document ID Issued Date Revised Date Revision Page. Reel packing SOT-23 3000 4.0 30,000 183*183*123 178 383*262*387 240,000 11.6 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) Profile Feature Soldering Condition Average ramp-up rate(T to T ) <3 /sec Preheat -Temperature Min(Tsmin) 150 -Temperature Max(Tsmax) 200 -Time(min to max)(t ) 60~120sec Tsmax to T -Ramp-upRate <3 /sec Time maintained above: -Temperature(T ) 217 -Time(t ) 60~260sec Peak Temperature(T ) 255 0/ 5 Time within 5 of actual Peak Temperature(t ) Ramp-down Rate <6 /sec Time 25 to Peak Temperature <6minutes LP s L L L P P o o o o o oo o o o C C C C C C- + C C C C 10~30sec 3.Reflow soldering 1.Storage environment: Temperature=5 ~40 Humidity=55%±25% 2.Reflow soldering of surface-mount devices oo CC Suggested thermal profiles for soldering processes Critical Zone TL to TP Critical Zone TL to TP TL Tsmax Tsmin Ramp-up Tp tS Preheat t25 C to Peak o Time TL TP Ramp-down Temperature DS-231107 2008/02/10 2011/07/21 D 9 SMD NPN Transistor