FMBT2222A FCI | Alldatasheet

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MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Dissipation 300 mW TJ, Tstg Junction and Storage Temperature -55to+150 ℃ ELECTRICAL CHARACTERISTICS （Tamb=25℃ unless otherwise specified ） P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10μA， I E=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA， I B=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA， I C=0 6 V Collector cut-off current ICBO V CB=70 V , I E=0 0.1 μA Collector cut-off current ICEX V CE=60V , V BE(off)=3V 0.1 μA Emitter cut-off current IEBO V EB= 3V , I C=0 0.1 μA HFE(1) V CE=10V, I C= 150mA 100 300 HFE(2) V CE=10V, I C= 0.1mA 40 DC current gain HFE(3) V CE=10V, I C= 500mA 42 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB=15mA 0.6 0.3 V Base-emitter saturation voltage VBE(sat) I C=500 mA, IB= 50mA 1.2 V Transition frequency fT VCE=20V, I C= 20mA f=100MHz 300 MHz Delay time td 10 nS Rise time tr VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 25 nS Storage time tS 225 nS Fall time tf VCC=30V, IC=150mA IB1=-IB2=15mA 60 nS SOT-23 MARKING: 1P

FEATURES

y Epitaxial planar die construction y Complemen ta ry PNP Type available(FMMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR FMBT2222A FMBT2222A NPN Bipolar Transistor Dimension in mm Mechanical DimensionsDescription

CLASSIFICATION OF hFE(1) Rank L H Range 100-200 200-300 F FMBT2222A NPN Bipolar Transistor

FMBT2222A NPN Bipolar Transistor