FMBT1815 FCI | Alldatasheet
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Technical content
VEBO 5.0 V IC 150 mA Total Device Dissipation FR-5 Board (Note1) TA = 25oC Junction and Storage Temperature
Description
Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current (Continuous) Symbol Value Units P D 125 mW TJ, TSTG -55 to 150 oC Mechanical Dimensions .110 .060 .037 .037 .115 .016 .043 .004 .016 Electrical Characteristics @ 25oC Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage (IC = 1.0mA) Collector - Base Breakdown Voltage (IC = 0.1mA) Emitter - Base Breakdown Voltage (IE = 0.01mA) Collector Cutoff Current (VCB = 60V) Emitter Cutoff Current (VEB = 5.0V) DC Current Gain (IC = 2.0 mA, VCE = 6.0 V)* (IC = 150 mA, VCE = 6.0 V) Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 10 mA) Base - Emitter Saturation Voltage (IC = 100 mA, IB = 10 mA) Current - Gain - Bandwidth Product (IC = 1.0 mA, VCE = 10 V, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) VBR(CEO) 50 --- V VBR(CBO) 60 --- V VBR(EBO) 5.0 --- V ICBO --- 0.1 µA IEBO --- 0.1 µA HFE --- 120 600 25 --- VCE(sat) Vdc --- 0.25 VBE(sat) Vdc --- 1.0 fT 80 --- MHz Cob --- 3.5 pF * Classification of hFE Rank C4Y C4G C4B Range 120-240 200-400 350-600
Epitaxial Planar Transistor