FMBT1015 FCI | Alldatasheet
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Technical content
VEBO -5.0 V IC -150 mA Total Device Dissipation FR-5 Board (Note1) TA = 25oC Junction and Storage Temperature
Description
Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current (Continuous) Symbol Value Units P D 125 mW TJ, TSTG -55 to 150 oC Mechanical Dimensions .110 .060 .037 .037 .115 .016 .043 .004 .016 Electrical Characteristics @ 25oC Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage (IC = -1.0mA) Collector - Base Breakdown Voltage (IC = -0.1mA) Emitter - Base Breakdown Voltage (IE = -0.01mA) Collector Cutoff Current (VCB = -50V) Emitter Cutoff Current (VEB = -5.0V) DC Current Gain (IC = -2.0 mA, VCE = -6.0 V)* (IC = -150 mA, VCE = -6.0 V) Collector - Emitter Saturation Voltage (IC = -100 mA, IB = -10 mA) Base - Emitter Saturation Voltage (IC = -100 mA, IB = -10 mA) Current - Gain - Bandwidth Product (IC = -1.0 mA, VCE = -10 V, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) VBR(CEO) -50 --- V VBR(CBO) -50 --- V VBR(EBO) -5.0 --- V ICBO --- -0.1 µA IEBO --- -0.1 µA HFE --- 120 600 25 --- VCE(sat) Vdc --- -0.3 VBE(sat) Vdc --- -1.1 fT 80 --- MHz Cob --- 7.0 pF * Classification of hFE Rank A4Y A4G A4B Range 120-240 200-400 350-600
Epitaxial Planar Transistor