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Technical content

2~3 4~5 List http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 SMD MOSFET FMBSS84 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 SMD MOSFET

Features

ow on-resistance R = 10ΩDS(ON) ow input capacitance : 30pF Fast switching speed : 2.5ns ow output capacitance : 10pF ow threshole : 2.0V In compliance with EU RoHS 2002/95/EC directives

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  • Suffix "-H" indicates Halogen-free part, ex.FMBSS84-H PARAMETER Drain-source voltage Drain current-continue Total power dissipation Gate- source voltage-continue Operation junction temperature CONDITIONS Symbol VDSS PD TJ RθJA MIN. -55 TYP. MAX. +150 556 UNIT V o C o C/W o Maximum ratings (AT T =25 C unless otherwise noted)A VGS ID 225 ±20 130 V mA mW Junction to ambient thermal resistance -pulsed IDM O (Derate above 25 C) 520 Storage temperature TSTG -65 +150 o C 50V P-Channel Enhancement Mode Power MOSFET Mechanical data
  • Case :
  • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026
  • Mounting Position : Any
  • Weight : Approximated 0.008 gram Epoxy:UL94-V0 rated flame retardant Molded plastic, SOT-23 O T = 25 CA FMBSS84 Document ID Issued Date Revised Date Revision Page. SOT-23 Dimensions in inches and (millimeters) 0.035 (0.89) 0.051 (1.30) 0.063 (1.60) 0.047 (1.20) 0.108 (2.75) 0.083 (2.10) 0.027 (0.67) 0.013 (0.32) (A) (B) (C) 0.120 (3.04) 0.110 (2.80) .084(2.10) 0.034 (0.85) 0.020 (0.50) 0.003 (0.09) DS-231142 2009/08/10 2011/07/21 C 8

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Formosa MS PARAMETER Gate-body leakage current-forward Gate threshold voltage Static drain-source on-resistance Source-drain current (pulse), Note 2 Forward transconductance, Note 1 Intput capacitance Reverse transfer capacitance Turn-On Delay Time Turn-Off Delay Time VGS = 0V, ID= -250uA VGS = 20V, VDS=0 VDS = , ID = 1.0mAVGS VGS = 5.0V, ID = 100mA CONDITIONS Symbol BVDSS IGSSF VGS(th) IDSS gFS Ciss td(ON) MIN. TYP. MAX. UNIT V uA V Ω ms V pF ns o Electrical characteristics (At T =25 C unless otherwise noted)A Drain-source breakdown voltage VDD = -15V, ID=-2.5ARL=50Ω, VDS =25V, ID = 100mA, f = 1kHz* SMD MOSFET Zero gate voltage drain current VDS = 25V, VGS = 0V VDS = 50V, VGS = 0V 15 0.1 µA Gate-body leakage current-reverse VGS = -20V, VDS=0 IGSSR -60 uA RDS(ON) 0.8 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 1) Source-drain current IS 0.130 A ISM 0.520 A Forward on voltage, Note 1 DYNAMIC CHARACTERISTICS Output capacitance Coss Crss VDS = 5V, VGS = 0V, f=1.0MHz 10 5.0 Gate charge QT 6000 pC tr td(OFF) tf 1.0 Note 1. Pulse duration >= 300µs, duty cycle 2.0% 2. Pulse width limited by Max. junction temperature 3. Surface mounted on 1 inch square copper pad of FR4 board; 270°C/W when mounted on min. copper pad. VSD FMBSS84 2.0 2.5 5.0 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 FIG.1 TRANSFER CHARACTERISTICS FIG.2 ON-REGION CHARACTERISTICS FIG.3 ON-RESISTANCE VS DRAIN CURRENT FIG.4 ON-RESISTANCE VS DRAIN CURRENT V , GATE TO SOURCE VOLTAGE, (V)GS Rating and characteristic curves (FMBSS84) I , DRAIN CURRENT,(A)D 1 2 3 4 0.6 0.4 0.1 0.2 0.3 O 25 C O -55 C O 150 C V = 10VDS 0.5 I , DRAIN CURRENT(A)D V , DRAIN TO SOURCE VOLTAGE(V)DS 0 2 4 10 0.5 0.4 0.3 0.1 0.2 V = 3.5VGS 3.25V 3.0V 2.75V 2.25V 2.5V O T =25 CJ I , DRAIN CURRENT (A)D R , DRAIN- TO- SOURCE RESISTANCE (OHMS)DS(on) 0 0.2 0.4 O 25 C 0.6 O -55 C O 150 C V = 4.5VGS I , DRAIN CURRENT (A)D 0 0.2 0.4 O 25 C 0.6 O -55 C O 150 C V = 10VGS Document ID Issued Date Revised Date Revision Page. R , DRAIN- TO- SOURCE RESISTANCE (OHMS)DS(on) DS-231142 2009/08/10 2011/07/21 C 8

FIG.6 GATE CHARGE FIG.7 BODY DIODE FORWARD VOLTAGE Rating and characteristic curves (FMBSS84) Page 5 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 FIG.5 ON-RESISTANCE VARIATION WITH TEMPERATURE R , DRAIN-TO-SOURCE RESISTANCEDS(on) (NORMALIZED) O T , JUNCTION TEMPERAURE, ( C)J -55 -5 45 95 1.8 0.8 1.2 1.4 0.6 V = 10VGS I = 0.52AD 1.6 145 V = 4.5VGS I = 0.13AD V , GATE TO SOURCE VOLTAGE,(V)GS Q , TOTAL GATE CHARGE, (pC)T 0 500 1000 1500 V = 40VDS I = 0.5AD 2000 O T = 25 CJ O

150 C O

O -55 C 0.01 3.02.5 V , DIODE FORWARD VOLTAGE, (V)SD 2.01.51.00.50 0.1 0.001 I , DIODE CURRENT(A)D Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 SMD MOSFET Suggested solder pad layout SOT-23 Dimensions in inches and (millimeters) 0.035(0.90) 0.031(0.80) 0.079(2.0) 0.037(0.95) 0.037(0.95) Marking Type number Marking code FMBSS84 PD Pinning information PinD Drain PinG Gate PinS Source Pin Simplified outline Symbol G D S Drain Source Gate FMBSS84 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8

E B d F W PA D D1D2 C T http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 SMD MOSFET Item Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 7" Reel outside diameter 13" Reel inner diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Reel width Overall tape thickness Tape width E B C d F T W P A D D Symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 unit:mm 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 3.15 2.77 1.22 FMBSS84 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 SMD MOSFET FMBSS84 Document ID Issued Date Revised Date Revision Page. Reel packing SOT-23 3000 4.0 30,000 183*183*123 178 383*262*387 240,000 11.6 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) Profile Feature Soldering Condition Average ramp-up rate(TL to TP) <3 /sec Preheat o -Temperature Min(Tsmin) 150 C o -Temperature Max(Tsmax) 200 C -Time(min to max)(ts) 60~120sec Tsmax to TL o -Ramp-upRate <3 C/sec Time maintained above: o -Temperature(TL) 217 C -Time(tL) 60~260sec o o Peak Temperature(TP) 255 C-0/+5 C o Time within 5 C of actual Peak Temperature(tP) o Ramp-down Rate <6 C/sec o Time 25 C to Peak Temperature <6minutes o C 10~30sec 3.Reflow soldering 1.Storage environment: Temperature=5 ~40 Humidity=55%±25% 2.Reflow soldering of surface-mount devices o o C C Suggested thermal profiles for soldering processes Critical Zone TL to TP TL Tsmax Tsmin Ramp-up Tp tS Preheat o t25 C to Peak Time TL TP Ramp-down Temperature DS-231142 2009/08/10 2011/07/21 C 8