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Document overview
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- PDF pages: 6
Technical content
Features
- This device has matched dies
- Sourced from process 16
- See MMBT5551 for characteristics
Ordering Information
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Figure 1. Device Package Figure 2. Internal Connection
FMBM5551 — NPN General-Purpose Amplifier www.onsemi.com Thermal Characteristics(1), (2) Values are at TA = 25°C unless otherwise noted. Notes: 1. PD total, for both transistors. For each transistor, PD = 350 mW. 2. PCB s
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit PD Power Dissipation (TC = 25°C) 0.7 W Derate Above 25°C5 .6 mW/°C RθJA Thermal Resistance, Junction-to-Ambient 180 °C/W Symbol Parameter Conditions Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage I C = 1 mA, IB = 0 160 V BVCBO Collector-Base Breakdown Voltage I C = 100 μA, IE = 0 180 V BVEBO Emitter-Base Breakdown Voltage I E = 10 μA, IC = 0 6 V ICBO Collector Cut-Off Current VCB = 120 V, IE = 0 50 nA VCB = 120 V, IE = 0, TA = 100°C 50 μA IEBO Emitter Cut-Off Current VEB = 4 V, IC = 0 50 nA hFE1 DC Current Gain VCE = 5 V, IC = 1 mA 80 DIVID1 Variation Ratio of hFE1 Between Die 1 and Die 2 hFE1(Die1) / hFE1(Die2) 0.9 1.1 hFE2 DC Current Gain VCE = 5 V, IC = 10 mA 80 250 DIVID2 Variation Ratio of hFE2 Between Die 1 and Die 2 hFE2(Die1) / hFE2(Die2) 0.95 1.05 hFE3 DC Current Gain VCE = 5 V, IC = 50 mA 30 DIVID3 Variation Ratio of hFE3 Between Die 1 and Die 2 hFE3(Die1) / hFE3(Die2) 0.9 1.1 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA 0.15 V IC = 50 mA, IB = 5 mA 0.20 VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA 1 V IC = 50 mA, IB = 5 mA 1 VBE(on) Base-Emitter On Voltage VCE = 5 V, IC = 10 mA 1 V DEL Difference of VBE(on) Between Die1 and Die 2 VBE(on)(Die1) - VBE(on)(Die2) -8 8 mV Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 6 pF Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 20 pF fT Current Gain Bandwidth Product VCE = 10 V, IC = 10 mA, f = 100 MHz 100 300 MHz NF Noise Figure VCE = 5 V, IC = 200 μA, f = 1 MHz, RS = 20 kΩ, B = 200 Hz 8d B hfe Small Signal Current Gain VCE = 10 V, IC = 1.0 mA, f = 10 kHz 50 250
Figure 11. 6-LEAD, SUPERSOT6, JEDEC MO-193, 1.6 MM WIDE
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