FMBM5551

FMBM5551 FAIRCHILD | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FMBM5551 Rev. D FMBM5551 NPN General Purpose Amplifier April 2005 FMBM5551 NPN General Purpose Amplifier

• This device has matched dies
• Sourced from process 16.
• See MMBT5551 for characteristics Absolute Maximum Ratings * * Pd total, for both transistors. For each transistor, Pd = 350mW Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 600 mA PC Collector Dissipation (TC = 25°C) 0.7 W TJ Junction Temperature 150 °C TSTG Storage Temperature Range -55 ~ 150 °C TθJA Thermal Resistance, Junction to Ambient 180 °C/W Symbol Parameter Conditions Min. Max Units Off Characteristics BVCEO Collector-Emitter Voltage I C = 1mA, IB = 0 160 V BVCBO Collector-Base Voltage I C = 100µA, IE = 0 180 V BVEBO Emitter-Base Voltage I C = 10µA, IC = 0 6 V ICBO Collector Cut-off Current V CB = 120V VCB = 120V, Ta = 100°C nA µA IEBO Emitter Cut-off Current V EB = 4V 50 nA On Characteristics hFE1 DC Current Gain V CE = 5V, IC = 1mA 80 DIVID1 Variation Ratio of h FE1 Between Die 1 and Die 2 h FE1(Die1)/hFE1(Die2) 0.9 1.1 hFE2 DC Current Gain V CE = 5V, IC = 10mA 80 250 DIVID2 Variation Ratio of h FE2 Between Die 1 and Die 2 h FE2(Die1)/hFE2(Die2) 0.95 1.05 SuperSOTTM-6 Mark: .3S2 pin #1 Dot denotes pin #1

2 www.fairchildsemi.com FMBM5551 Rev. D FMBM5551 NPN General Purpose Amplifier Electrical Characteristics (Continued) TC = 25°C unless otherwise noted Symbol Parameter Conditions Min. Max Units hFE3 DC Current Gain V CE = 5V, IC = 50mA 30 DIVID3 Variation Ratio of h FE3 Between Die 1 and Die 2 h FE3(Die1)/hFE3(Die2) 0.9 1.1 VCE(sat) Collector-Emitter Saturation Voltage I C = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.15 0.2 V V VBE(sat) Base-Emitter Saturation Voltage I C = 10mA, IB = 1mA IC = 50mA, IB = 5mA V V VBE(on) Base-Emitter On Voltage V CE = 5V, IC = 10mA 1 V DEL Difference of V BE(on) Between Die1 and Die 2 V BE(on)(Die1)-VBE(on)(Die2) -8 8 mV Small Signal Characteristics C ob Output Capacitance V CB = 10V, f = 1MHz 6 pF Cib Input Capacitance V CB = 0.5V, f = 1MHz 20 pF fT Current Gain Bandwidth Product V CE = 10V, IC = 10mA, f = 100MHz 100 300 MHz NF Noise Figure V CE = 5V, I C = 200 µA, f = 1MHz, RS = 20KΩ, B = 200Hz 8d B hfe Small Signal Current Gain V CE = 10V, IC = 1.0mA, f = 1.0KHz 50 250

3 www.fairchildsemi.com FMBM5551 Rev. D FMBM5551 NPN General Purpose Amplifier Mechanical Dimensions SuperSOTTM-6 Dimensions in Millimeters

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. 4 www.fairchildsemi.com FMBM5551 Rev. D FMBM5551 NPN General Purpose Amplifier DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ Rev. I15